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부품번호 | AP9435GH-HF 기능 |
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기능 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | ||
제조업체 | Advanced Power Electronics | ||
로고 | |||
전체 5 페이지수
Advanced Power
Electronics Corp.
AP9435GH/J-HF
Halogen-Free Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
▼ Simple Drive Requirement
D
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
G
S
Description
AP9435 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and
fast switching performance. It provides the designer with an extreme
efficient device for use in a wide range of power applications.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and suited
for high current application due to the low connection resistance. The
through-hole version (AP9435GJ) are available for low-profile
applications.
BVDSS
RDS(ON)
ID
-30V
50mΩ
- 20A
G
D
S
TO-252(H)
G
D
S
TO-251(J)
Absolute
Symbol
Maximum
RatingPsa@ramTej=te2r 5oC. (unless
otherwise specified)
Rating
Units
VDS Drain-Source Voltage
- 30 V
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
Gate-Source Voltage
Drain Current, VGS @ 10V
Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
+20 V
- 20 A
-13 A
-60 A
12.5 W
0.1 W/℃
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
10
62.5
110
Units
℃/W
℃/W
℃/W
1
201409176AP
AP9435GH/J-HF
12
I D =-10A
V DS =-24V
10
8
6
4
2
0
0 4 8 12 16 20
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
f=1.0MHz
1000
Ciss
100
Coss
Crss
10
1 5 9 13 17 21 25 29
-V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
100 1
10us
Duty factor=0.5
10
100us
1
T C =25 o C
Single Pulse
1ms
10ms
100ms
DC
0.1
0.1 1 10
-V DS , Drain-to-Source Voltage (V)
100
Fig 9. Maximum Safe Operating Area
0.2
0.1
. 0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
t , Pulse Width (s)
1
Fig 10. Effective Transient Thermal Impedance
VDS
90%
10%
VGS
td(on) tr
td(off)tf
VG
-4.5V
QG
QGS QGD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
AP9435GH-HF | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
AP9435GH-HF-3 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |