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부품번호 | QS6K21FRA 기능 |
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기능 | Nch 45V 1A Power MOSFET | ||
제조업체 | ROHM Semiconductor | ||
로고 | |||
전체 14 페이지수
QS6K21FRA
Nch 45V 1A Power MOSFET
VDSS
RDS(on) (Max.)
ID
PD
45V
420mW
1A
1.25W
lFeatures
1) Low on - resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT6).
4) Pb-free lead plating ; RoHS compliant
lOutline
TSMT6
Datasheet
AEC-Q101 Qualified
(6)
(5)
(4)
(1)
(2)
(3)
lInner circuit
(1) Tr1 Gate
(2) Tr2 Source
(3) Tr2 Gate
(4) Tr2 Drain
(5) Tr1 Source
(6) Tr1 Drain
*1 ESD PROTECTION DIODE
*2 BODY DIODE
lPackaging specifications
Packaging
lApplication
DC/DC converters
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
Marking
lAbsolute maximum ratings(Ta = 25°C) <It is the same ratings for the Tr1 and Tr2>
Parameter
Symbol
Value
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Power dissipation
Junction temperature
Range of storage temperature
VDSS
ID *1
ID,pulse *2
VGSS
PD *3
PD *4
Tj
Tstg
45
1.0
2.0
12
1.25
0.9
0.6
150
-55 to +150
Taping
180
8
3,000
TR
K21
Unit
V
A
A
V
W / total
W / element
W / total
°C
°C
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
1/11
2012.10 - Rev.B
QS6K21FRA
lElectrical characteristic curves
Fig.1 Power Dissipation Derating Curve
120
100
80
60
40
20
0
0 50 100 150 200
Junction Temperature : Tj [°C]
Data Sheet
Fig.2 Maximum Safe Operating Area
10
Operation in this area
is limited by RDS(on)
(VGS = 4.5V)
1
PW = 100ms
PW = 1ms
PW = 10ms
0.1 DC Operation
Ta=25ºC
Single Pulse
Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)
0.01
0.1 1
10
100
Drain - Source Voltage : VDS [V]
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
10
Ta=25ºC
Single Pulse
1
0.1
0.01
0.001
0.0001
top D = 1
D = 0.5
D = 0.1
D = 0.05
D = 0.01
bottom Single
Rth(ch-a)=139ºC/W
Rth(ch-a)(t)=r(t)×Rth(ch-a)
Mounted on ceramic board
(30mm × 30mm × 0.8mm)
0.01 1 100
Pulse Width : PW [s]
Fig.4 Single Pulse Maximum
Power dissipation
1000
Ta=25ºC
Single Pulse
100
10
1
0.0001
0.01 1 100
Pulse Width : PW [s]
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
4/11
2012.10 - Rev.B
4페이지 QS6K21FRA
lElectrical characteristic curves
Fig.13 Static Drain - Source On - State
Resistance vs. Drain Current(I)
10000
Ta=25ºC
Pulsed
1000
VGS= 2.5V
VGS= 4.0V
VGS= 4.5V
100
0.01
0.1 1
Drain Current : ID [A]
10
Data Sheet
Fig.14 Static Drain - Source On - State
Resistance vs. Junction Temperature
600
550
500
450
400
350
300
250
200
150
100 VGS = 4.5V
50
ID = 1.0A
Pulsed
0
-50 -25 0 25 50 75 100 125 150
Junction Temperature : Tj [ºC]
Fig.15 Static Drain - Source On - State
Resistance vs. Drain Current(II)
10000
VGS= 4.5V
Pulsed
1000
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
Fig.16 Static Drain-Source On-State
Resistance vs. Drain Current(III)
10000
VGS= 4.0V
Pulsed
1000
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
100
0.01
0.1 1
Drain Current : ID [A]
10
100
0.01
0.1 1
Drain Current : ID [A]
10
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
7/11
2012.10 - Rev.B
7페이지 | |||
구 성 | 총 14 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
QS6K21FRA | Nch 45V 1A Power MOSFET | ROHM Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |