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C3198 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 C3198
기능 NPN Epitaxial Silicon Transistor
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C3198 데이터시트, 핀배열, 회로
C3198
NPN Epitaxial Silicon Transistor
Features
Collector-Emitter Voltage: VCEO=50V
Collector Dissipation: PC(max)=625mW
TO-92
Absolute Maximum Ratings (TA=25oC)
Characteristic
Symbol Rating Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
60
50
5
150
625
150
-55~+150
V
V
V
mA
mW
oC
oC
1. Emitter 2. Collector 3. Base
Electrical Characteristics (TA=25oC)
Characteristic
Symbol
Test Conditions
Collector-Base Breakdown Voltage
BVCBO IC= 100µA, IE=0
Collector-Emitter Breakdown Voltage
BVCEO IC= 1mA, IB=0
Emitter-Base Breakdown Voltage
BVEBO IE= 100µA, IC=0
Collector Cut-off Current
ICBO VCB= 60V, IE=0
Emitter Cut-off Current
IEBO VEB= 5V, IC=0
DC Current Gain
hFE(1) VCE= 6V, IC= 2mA
hFE(2) VCE= 6V, IC= 150mA
Collector-Emitter Saturation Voltage
VCE(sat) IC= 100mA, IB= 10mA
Base-Emitter Saturation Voltage
VBE(sat) IC= 100mA, IB= 10mA
Transition Frequency
fT VCE= 10V, IC= 1mA
F=30MHz
Min Typ Max Unit
60 V
50 V
5V
.01 µA
0.1 µA
70 700
25 100
0.1 0.25
V
1V
80 MHz
hFE CLASSIFICATION
Classification
O
hFE 70-140
Y
120-240
GR
200-400
BL
350-700
Elite Enterprises (H.K.) Co., Ltd.
Flat 2505, 25/F., Nanyang Plaza, 57 Hung To Road, Kwun Tong, H.K.
Tel: (852) 2723-3122 Fax: (852) 2723-3990 Email: info@elite-ent.com.hk
Part No.: C3198
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