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Datasheet 2N7002KU Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 2N7002KU | N Channel MOSFET SEMICONDUCTOR
TECHNICAL DATA
INTERFACE AND SWITCHING APPLICATION.
FEATURES ESD Protected 2000V.(Human Body Model) High density cell design for low RDS(ON). Voltage controlled small signal switch.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING UNIT
Drain-Source Voltage
Gate-Source Voltage
|  KEC | mosfet |
| 2 | 2N7002KU | N-Channel Enhancement Mode MOSFET 2N7002KU
N-Channel Enhancement Mode MOSFET
High Speed Switching Application
Features
ESD rating: 1000V (HBM)
Low On-Resistance: RDS(on) < 3Ω @ VGS = 10V High power and current handling capability Very fast switching RoHS compliant device
Applications
High speed line driv |  AUK | mosfet |
| 3 | 2N7002KU | N-Channel MOSFET Main Product Characteristics
VDSS
60V
RDS(on) 3Ω(max.)
ID 0.3A Features and Benefits
SOT-23
Advanced MOSFET process technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body |  GOOD-ARK | mosfet |
2N7 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2N70 | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 2N70
2 Amps, 700 Volts N-CHANNEL POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC 2N70 is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. T  Unisonic Technologies mosfet | | |
| 2 | 2N70-M | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
2N70-M
Preliminary
2 Amps, 700 Volts N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N70-M is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characterist Unisonic Technologies mosfet | | |
| 3 | 2N7000 | N-CHANNEL MOSFET 2N7000
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions TO-92 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-92 Plastic Package.
特征 / Features
灵敏的控制级触发电流和很低的维持电流。 Sensitive gate trigger current and Low Holding current.
用途 / Applic  BLUE ROCKET ELECTRONICS mosfet | | |
| 4 | 2N7000 | Small Signal MOSFET 2N7000
Small Signal MOSFET
200 mA, 60 V N-Channel
Drain
Gate
Source
1. Source 2.Gate 3.Drain TO-92 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Drain Source Voltage
Drain-Gate Voltage (RGS = 1 MΩ)
Gate-source Voltage Drain Current
Continuous Non-repetitive ( tp ≤ 50 �  SEMTECH mosfet | | |
| 5 | 2N7000 | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
INTERFACE AND SWITCHING APPLICATION.
FEATURES High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capablity.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
Gate-Source Vol KEC transistor | | |
| 6 | 2N7000 | Small Signal MOSFET WEITRON
Small Signal MOSFET N-Channel
3 DRAIN
Features:
*Low On-Resistance : 5Ω *Low Input Capacitance: 60PF *Low Out put Capacitance : 25PF *Low Threshole :1.4V(TYE) *Fast Switching Speed : 10ns
2 GATE
1 SOURCE
2N7000
TO-92
1. SOURCE 2. GATE 3. DRAIN
1 2 3
Maximum Ratings (TA=25 C Unless  WEITRON mosfet | | |
| 7 | 2N7000 | N-Channel Enhancement Mode Power MosFET Elektronische Bauelemente
2N7000
200mA,60V,RDS(ON) 6 N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
The 2N7000 is designed for high voltage, high speed applications such as switching regulators, converters, solenoid and relay drives.
D
SEATING PLANE
b1
TO-92
E S1
 SeCoS mosfet | | |
| 8 | 2N7000 | Logic N-Channel MOSFET SemiWell Semiconductor
Features
■ RDS(on) (Max 5 Ω )@VGS=10V RDS(on) (Max 5.3Ω )@VGS=4.5V
■ Gate Charge (Typical 0.5nC) ■ Maximum Junction Temperature Range (150°C)
2N7000
Logic N-Channel MOSFET
Symbol 2. Gate {
{ 3. Drain
●
◀▲
● ●
{ 1. Source
General Description
This Power  SemiWell mosfet | | |
| 9 | 2N7000 | CASE 29-04/ STYLE 22 TO-92 (TO-226AA) MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N7000/D
TMOS FET Transistor
N–Channel — Enhancement
3 DRAIN 2 GATE 1 SOURCE
2N7000
Motorola Preferred Device
MAXIMUM RATINGS
Rating Drain Source Voltage Drain–Gate Voltage (RGS = 1.0 MΩ) Gate–Source Voltage — Continuous �  Motorola Inc data | |
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