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PDF AMD531C Data sheet ( Hoja de datos )
| Número de pieza | AMD531C | |
| Descripción | N & P-Channel MOSFET | |
| Fabricantes | Analog Power | |
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Analog Power
AMD531C
P & N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize
High Cell Density process. Low rDS(on) assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry. Typical applications are PWMDC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, battery charger, telecommunication power
system, and telephones power system.
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
30 20 @ VGS = 4.5V
16 @ VGS = 10V
-30 33 @ VGS = -4.5V
23 @ VGS = -10V
ID (A)
51
41
-41
-31
• Low rDS(on) Provides Higher Efficiency and
Extends Battery Life
• Miniature DPAK Surface Mount Package
Saves Board Space
• High power and current handling capability
• Low side high current DC-DC Converter
applications
D
G1
S1
N-Channel MOSFET
S1 G1 D S2 G1
S2
G2
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parameter
Symbol N-Channel P-Channel
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Currentb
VDS
VGS
TA=25oC ID
IDM
30 -30
20 -20
51 -41.0
±40 ±40
Continuous Source Current (Diode Conduction)a
IS
30 -30
Power Dissipationa
TA=25oC PD
50 50
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 175 -55 to 175
Units
V
A
A
W
oC
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambienta
RθJA
Maximum Junction-to-Case
RθJC
Maximum
50
3.0
Units
oC/W
oC/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
July, 2005 - Rev. A
PRELIMINARY
1 Publication Order Number:
DS-AMD531_B
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet AMD531C.PDF ] | |
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