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PDF RTP21080-20 Data sheet ( Hoja de datos )
| Número de pieza | RTP21080-20 | |
| Descripción | GaN Power Amp Pallet | |
| Fabricantes | RFHIC | |
| Logotipo |  |
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GaN Power Amp Pallet
Product Features
• Doherty amplifier design
• GaN on SiC HEMT
• Small and light weight
• 50 Ohm Input/Output impedance matched
• Highly reliable and rugged design
• High efficiency
• 80W typical PAVG
RTP21080-20
Applications
• WCDMA & LTE DPD amplifier
• General purpose RF amplifier
Description
The RTP21080-20 is designed for RF system application frequencies from 2110 ~ 2170MHz, with high gain.
This Pallet Amplifier uses GaN on SiC HEMT technology which performs high breakdown voltage, high linearity, and high efficiency.
The RTP21080-20 is a DPD application amplifier.
Electrical Specifications @ VDD= 48V, 50Ω System
PARAMETER
Frequency Range
Operating Bandwidth
Average Output Power
UNIT
MHz
MHz
dBm
MIN
2110
-
48.5
TYP
-
60
49.0
MAX
2170
-
-
Peak Output Power
(Pulse duty 10%)
dBm 55.7
56.2
-
ACPR (LTE 10MHz 1FA*1)
@ Pout=49.0dBm Avg.
Pre-DPD
Post-DPD*2
dBc
-
-
-23
-52
-
-
RF Gain @ 25℃
dB 56 57 58
Gain Variation
dB ± 3dB @ operating temperature
Gain Flatness
dB -
± 0.5
±1
Input Return Loss
dB -
- -12
Output Return Loss
dB -
- -17
Operating Voltage
V
VDC1: 5.6±3%
VDC2:48 ±1V
Current Consumption
5.6V
48V
A
-
-
0.36 0.40
3.89 4.09
Efficiency @ 49.0dBm
% 40
43
-
Feedback Output level @ 49.0dBm
dBm
8
Note
1. Signal source condition : LTE 10MHz 1FA, PAPR [email protected]% probability on CCDF
10
12
2. DPD Solution : Broadcom OP6180
SYMBOL
fO
OBW
Pout
Psat
ACPR
GP
G
GF
S11
S22
VDC
IDD
Eff
FB
Korean Facilities : 82-31-8069-3036 / [email protected]
US Facility : 919-677-8780 / [email protected]
1/4
All specifications may change without notice
Version 1.0
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet RTP21080-20.PDF ] | |
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