Datasheet.kr   

SI7866DP PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 SI7866DP
기능 N-Channel 20-V (D-S) MOSFET
제조업체 Vishay
로고 Vishay 로고 


전체 5 페이지

		

No Preview Available !

SI7866DP 데이터시트, 핀배열, 회로
N-Channel 20-V (D-S) MOSFET
Si7866DP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
20
rDS(on) (W)
0.0025 @ VGS = 10 V
0.00375 @ VGS = 4.5 V
ID (A)
29
25
PowerPAKr SO-8
6.15 mm
D
8D
7
D
6
D
5
S
1S
5.15 mm
2
S
3G
4
Bottom View
Ordering Information: Si7866DP-T1
FEATURES
D TrenchFETr Power MOSFET
D Low rDS(on)
D PWM (Qgd and Rg) Optimized
D 100% Rg Tested
APPLICATIONS
D Low-Side MOSFET in Synchronous Buck
DC/DC Converters in Desktops
D Low Output Voltage Synchronous Rectifier
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
20
"20
29 18
25 14
60
4.5 1.6
5.4 1.9
3.4 1.2
-55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Case (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71848
S-31727—Rev. C, 18-Aug-03
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJC
Typical
18
50
1.0
Maximum
23
65
1.5
Unit
_C/W
www.vishay.com
1




SI7866DP pdf, 반도체, 판매, 대치품
Si7866DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
200
0.2
ID = 250 mA
- 0.0
160
120
Single Pulse Power
-0.2 80
- 0.4
- 0.6
-50 -25
0 25 50 75 100 125 150
TJ - Temperature (_C)
40
0
0.001
0.01
0.1
Time (sec)
1
10
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10 - 4
Single Pulse
10 - 3
10 - 2
10 - 1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 50_C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10 100 600
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
Single Pulse
0.05 0.02
0.01
10 - 4
www.vishay.com
4
10 - 3
10 - 2
10 - 1
Square Wave Pulse Duration (sec)
1 10
Document Number: 71848
S-31727—Rev. C, 18-Aug-03

4페이지













구       성총 5 페이지
다운로드[ SI7866DP.PDF 데이터시트 ]
구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

전력 반도체 판매 ( IGBT, TR 모듈, SCR, 다이오드 모듈 )

휴대전화 : 010-3582-2743


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877, [ 홈페이지 ]



링크공유

링크 :

관련 데이터시트

부품번호상세설명 및 기능제조사
SI7866DP

N-Channel 20-V (D-S) MOSFET

Vishay
Vishay

추천 데이터시트

부품번호상세설명 및 기능제조사
CQ1565RT

FSCQ1565RT, Green Mode Fairchild Power Switch. In general, a Quasi-Resonant Converter (QRC) shows lower EMI and higher power conversion efficiency compared to conventional hard-switched converter with a fixed switching frequency.

Fairchild
Fairchild
KF16N25D

MOSFET의 기능은 N Channel MOS Field effect transistor입니다. This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters and switching mode power supplies.( Vdss=250V, Id=13A )

KEC
KEC

DataSheet.kr    |   2018   |  연락처   |  링크모음   |   검색  |   사이트맵