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SSF3612 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 SSF3612
기능 N-Channel MOSFET
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SSF3612 데이터시트, 핀배열, 회로
SSF3612
30V N-Channel MOSFET
DESCRIPTION
The SSF3612 uses advanced trench
technology to provide excellent RDS(ON)
and low gate charge .This device is
suitable for use as a load switch or in
PWM applications.
GENERAL FEATURES
VDS = 30V,ID =11.6A
RDS(ON) < 17mΩ @ VGS=4.5V
RDS(ON) < 12mΩ @ VGS=10V
High Power and current handing capability
Lead free product
Surface Mount Package
D
G
S
Schematic Diagram
Marking and Pin Assignment
APPLICATIONS
PWM applications
Load switch
Power management
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
SSF3612
SSF3612
SOP-8
Ø330mm
SOP-8 Top View
Tape Width
12mm
Quantity
2500 units
ABSOLUTE MAXIMUM RATINGS (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous@ Current-Pulsed (Note 1)
ID(25)
ID(70)
IDM
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
PD
TJ,TSTG
Limit
30
±20
11.6
9
50
3.1
-55 To 150
Unit
V
V
A
A
A
W
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
40 /W
ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Min Typ Max Unit
30 V
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Rev.3.1




SSF3612 pdf, 반도체, 판매, 대치품
SSF3612
30V N-Channel MOSFET
Vgs Gate-Source Voltage (V)
Figure 7 Transfer Characteristics
TJ-Junction Temperature()
Figure 8 Drain-Source On-Resistance
Vgs Gate-Source Voltage (V)
Figure 9 Rdson vs Vgs
Vds Drain-Source Voltage (V)
Figure 10 Capacitance vs Vds
Qg Gate Charge (nC)
Figure 11 Gate Charge
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Vsd Source-Drain Voltage (V)
Figure 12 Source- Drain Diode Forward
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30V N-Channel MOSFET

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