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SSF3620 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 SSF3620
기능 Dual N-Channel MOSFET
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SSF3620 데이터시트, 핀배열, 회로
SSF3620
30V Dual N-Channel MOSFET
DESCRIPTION
The SSF3620 uses advanced trench
technology to provide excellent RDS(ON)
and low gate charge .This device is
suitable for use as a load switch or in
PWM applications.
GENERAL FEATURES
VDS = 30V,ID =7A
RDS(ON) < 30mΩ @ VGS=4.5V
RDS(ON) < 18.5mΩ @ VGS=10V
High Power and current handing capability
Lead free product
Surface Mount Package
Schematic Diagram
Marking and Pin Assignment
APPLICATIONS
PWM applications
Load switch
Power management
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
SSF3620
SSF3620
SOP-8
Ø330mm
SOP-8 Top View
Tape Width
12mm
Quantity
3000 units
ABSOLUTE MAXIMUM RATINGS (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Drain Current-Continuous@ Current-Pulsed (Note 1)
VGS
ID25
ID70
IDM
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
PD
TJ,TSTG
Limit
30
±20
7
5.8
25
2
-55 To 150
Unit
V
V
A
A
A
W
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
62.5 /W
ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BVDSS
IDSS
VGS=0V ID=250μA
VDS=30V,VGS=0V
Min Typ Max Unit
30 V
1 μA
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Rev.2.0




SSF3620 pdf, 반도체, 판매, 대치품
SSF3620
30V Dual N-Channel MOSFET
Vgs Gate-Source Voltage (V)
Figure 7 Transfer Characteristics
TJ-Junction Temperature()
Figure 8 Drain-Source On-Resistance
Vgs Gate-Source Voltage (V)
Figure 9 Rdson vs Vgs
Vds Drain-Source Voltage (V)
Figure 10 Capacitance vs Vds
Qg Gate Charge (nC)
Figure 11 Gate Charge
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Vsd Source-Drain Voltage (V)
Figure 12 Source- Drain Diode Forward
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링크공유

링크 :

관련 데이터시트

부품번호상세설명 및 기능제조사
SSF3620

PWM applications

Silikron Semiconductor Co
Silikron Semiconductor Co
SSF3620

Dual N-Channel MOSFET

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