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SSF4N60F PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 SSF4N60F
기능 MOSFET
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SSF4N60F 데이터시트, 핀배열, 회로
Main Product Characteristics:
VDSS
RDS(on)
600V
1.9Ω(typ.)
ID 4A
Features and Benefits:
TO-220F
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150operating temperature
SSF4N60F
Marking and pin
Assignment
Schematic diagram
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications
Absolute max Rating:
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=27.5mH
Avalanche Current @ L=27.5mH
Operating Junction and Storage Temperature Range
Max.
4
2.5
16
33
0.26
600
± 30
220
4
-55 to + 150
Units
A
W
W/°C
V
V
mJ
A
°C
©Silikron Semiconductor CO.,LTD.
2013.03.21
www.silikron.com
Version : 1.1
page 1 of 8




SSF4N60F pdf, 반도체, 판매, 대치품
Typical electrical and thermal characteristics
SSF4N60F
Figure 1: Typical Output Characteristics
Figure 2. Gate to source cut-off voltage
Figure 3. Drain-to-Source Breakdown Voltage vs.
Temperature
Figure 4: Normalized On-Resistance Vs. Case
Temperature
©Silikron Semiconductor CO.,LTD.
2013.03.21
www.silikron.com
Version : 1.1
page 4 of 8

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SSF4N60F 전자부품, 판매, 대치품
Ordering and Marking Information
Device Marking: SSF4N60F
Package (Available)
TO220F
Operating Temperature Range
C : -55 to 150 ºC
SSF4N60F
Devices per Unit
Package Units/
Type
Tube
TO220F
50
Tubes/Inner
Box
20
Units/Inner
Box
1000
Inner
Boxes/Carton
Box
6
Units/Carton
Box
6000
Reliability Test Program
Test Item
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Conditions
Tj=125to 150@
80% of Max
VDSS/VCES/VR
Tj=150@ 100% of
Max VGSS
Duration
168 hours
500 hours
1000 hours
Sample Size
3 lots x 77 devices
168 hours 3 lots x 77 devices
500 hours
1000 hours
©Silikron Semiconductor CO.,LTD.
2013.03.21
www.silikron.com
Version : 1.1
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