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SSF6010G PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 SSF6010G
기능 N-Channel MOSFET
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SSF6010G 데이터시트, 핀배열, 회로
Main Product Characteristics
VDSS
60V
RDS(on) 8.3mΩ (typ.)
ID 64A
Features and Benefits
TO-251
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175operating temperature
Lead free product
SSF6010G
60V N-Channel MOSFET
Marking and Pin
Assignment
Schematic Diagram
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAs
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=0.3mH
Avalanche Current @ L=0.3mH
Operating Junction and Storage Temperature Range
Max.
64
45
300
91
0.61
60
±20
160
32.6
-55 to +175
Units
A
W
W/°C
V
V
mJ
A
°C
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Rev.1.1




SSF6010G pdf, 반도체, 판매, 대치품
Typical Electrical and Thermal Characteristics
SSF6010G
60V N-Channel MOSFET
Figure 1: Typical Output Characteristics
Figure 2. Gate to source cut-off voltage
Figure 3. Drain-to-Source Breakdown Voltage Vs.
Case Temperature
Figure 4: Normalized On-Resistance Vs. Case
Temperature
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Rev.1.1

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SSF6010G 전자부품, 판매, 대치품
Ordering and Marking Information
SSF6010G
60V N-Channel MOSFET
Device Marking: SSF6010G
Package (Available)
TO-251(IPAK)
Operating Temperature Range
C : -55 to 175 ºC
Devices per Unit
Package Units/
Type
Tube
TO-251
80
Tubes/Inner
Box
60
Units/Inner
Box
4800
Inner
Boxes/Carton
Box
5
Units/Carton
Box
24000
Reliability Test Program
Test Item
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Conditions
Tj=125to 175@
80% of Max
VDSS/VCES/VR
Tj=175@ 100% of
Max VGSS
Duration
168 hours
500 hours
1000 hours
Sample Size
3 lots x 77 devices
168 hours 3 lots x 77 devices
500 hours
1000 hours
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링크공유

링크 :

관련 데이터시트

부품번호상세설명 및 기능제조사
SSF6010

Power switching application

Silikron Semiconductor Co
Silikron Semiconductor Co
SSF6010

60V N-Channel MOSFET

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