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SSF6014 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 SSF6014
기능 N-Channel MOSFET
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SSF6014 데이터시트, 핀배열, 회로
SSF6014
60V N-Channel MOSFET
FEATURES
Advanced trench process technology
avalanche energy, 100% test
Fully characterized avalanche voltage and current
Lead free product
ID =60A
BV=60V
R DS (ON)=14max.
DESCRIPTION
The SSF6014 is a new generation of middle voltage and high
current N–Channel enhancement mode trench power
MOSFET. This new technology increases the device reliability
and electrical parameter repeatability. SSF6014 is assembled
in high reliability and qualified assembly house.
APPLICATIONS
Power switching application
SSF6014 Top View (TO-220)
Absolute Maximum Ratings
Parameter
ID@Tc=25ْ C Continuous drain current,VGS@10V
ID@Tc=100Cْ Continuous drain current,VGS@10V
IDM Pulsed drain current
Power dissipation
PD@TC=25ْC
Linear derating factor
VGS Gate-to-Source voltage
EAS Single pulse avalanche energy
EAR Repetitive avalanche energy
TJ
TSTG
Operating Junction and
Storage Temperature Range
Max.
60
42
240
115
0.74
±20
235
TBD
–55 to +175
Units
A
W
W/ْ C
V
mJ
ْC
Thermal Resistance
Parameter
RθJC Junction-to-case
RθJA Junction-to-ambient
Min.
Typ.
1.31
Max.
62
Units
ْC/W
Electrical Characteristics @T J=25 ْC (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BVDSS Drain-to-Source breakdown voltage 60 — — V
RDS(on) Static Drain-to-Source on-resistance — 12 14 mΩ
VGS(th) Gate threshold voltage
2.0 4.0 V
gfs Forward transconductance
— 60 — S
—— 2
IDSS Drain-to-Source leakage current
μA
— — 10
IGSS Gate-to-Source forward leakage
— — 100 nA
Test Conditions
VGS=0V,ID=250μA
VGS=10V,ID=30A
VDS=VGS,ID=250μA
VDS=5V,ID=30A
VDS=60V,VGS=0V
VDS=60V,
VGS=0V,TJ=150ْC
VGS=20V
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Rev.2.3




SSF6014 pdf, 반도체, 판매, 대치품
SSF6014
60V N-Channel MOSFET
Gate Charge
Source-Drain Diode Forward Voltage
Safe Operation Area
Max Drain Current vs. Junction Temperature
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Transient Thermal Impedance Curve
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Rev.2.3

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