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부품번호 | SSF6NS70UD 기능 |
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기능 | N-Channel MOSFET | ||
제조업체 | GOOD-ARK | ||
로고 | |||
전체 7 페이지수
Main Product Characteristics
VDSS
700V
RDS(on) 0.95Ω (typ.)
ID 6A ①
TO-252 (DPAK)
Features and Benefits
High dv/dt and avalanche capabilities
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Lead free product
SSF6NS70UD
700V N-Channel MOSFET
Marking and Pin
Assignment
Schematic Diagram
Description
The SSF6NS70UD series MOSFET is a new technology, which combines an innovative super junction
technology and advance process. This new technology achieves low RDS(ON), energy saving, high
reliability and uniformity, superior power density and space saving.
Absolute Max Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current ②
Power Dissipation ③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=100mH
Avalanche Current @ L=100mH
Operating Junction and Storage Temperature Range
Max.
6①
3.7①
18
33
0.264
700
± 30
72
1.2
-55 to +150
Units
A
W
W/°C
V
V
mJ
A
°C
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Page 1 of 7
Rev.1.0
Typical Electrical and Thermal Characteristics
SSF6NS70UD
700V N-Channel MOSFET
Figure 1: Typical Output Characteristics
Figure 2. Gate to source cut-off voltage
Figure 3. Drain-to-Source Breakdown Voltage Vs.
Case Temperature
Figure 4: Normalized On-Resistance Vs. Case
Temperature
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Page 4 of 7
Rev.1.0
4페이지 Ordering and Marking Information
SSF6NS70UD
700V N-Channel MOSFET
Device Marking: SSF6NS70UD
Package (Available)
TO-252(DPAK)
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit(options)
Package
Type
Units/Tape Tapes/Inner
Box
TO-252
TO-252
TO-252
2500
2500
800
2
1
5
Units/Inner
Box
5000
2500
4000
Inner
Boxes/Carton
Box
7
10
8
Units/Carton
Box
35000
25000
32000
Reliability Test Program
Test Item
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Conditions
Tj=125℃ to 150℃ @
80% of Max
VDSS/VCES/VR
Tj=150℃ @ 100% of
Max VGSS
Duration
168 hours
500 hours
1000 hours
Sample Size
3 lots x 77 devices
168 hours 3 lots x 77 devices
500 hours
1000 hours
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Page 7 of 7
Rev.1.0
7페이지 | |||
구 성 | 총 7 페이지수 | ||
다운로드 | [ SSF6NS70UD.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
SSF6NS70UD | N-Channel MOSFET | SILIKRON |
SSF6NS70UD | N-Channel MOSFET | GOOD-ARK |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |