Datasheet 2SD1047 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	2SD1047	High power NPN epitaxial planar bipolar transistor 2SD1047 High power NPN epitaxial planar bipolar transistor Features ■ High breakdown voltage VCEO = 140 V ■ Typical ft = 20 MHz ■ Fully characterized at 125 oC Application ■ Power supply Description The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear	STMicroelectronics	transistor
2	2SD1047	POWER TRANSISTORS(12A/140V/100W) A A A	Mospec Semiconductor	transistor
3	2SD1047	NPN Triple Diffused Planar Silicon Transistors www.DataSheet.co.kr Ordering number:ENN680F PNP Epitaxial Planar Silicon Transistors NPN Triple Diffused Planar Silicon Transistors 2SB817/2SD1047 140V/12A AF 60W Output Applications Features · Capable of being mounted easily because of onepoint fixing type plastic molded package (Interchangeabl	Sanyo Semicon Device	transistor
4	2SD1047	NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) 2SD1047 AUDIO POWER AMPLIFIER DC TO DC CONVERTER NPN PLANAR SILICON TRANSISTOR SC-65 ! ! ! High Current Capability High Power Dissipation Complementary to 2SB817 ABSOLUTE MAXIMUM RATING (TA=25℃) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector C	Wing Shing Computer Components	transistor
5	2SD1047	SILICON POWER TRANSISTOR SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1047 www.datasheet4u.com DESCRIPTION ·Complement to type 2SB817 ·With TO-3PN package APPLICATIONS ·Power amplification ·Low frequency and audio band PINNING PIN 1 2 3 Base Collector;connected to mounting base Emit	SavantIC	transistor

2SD Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	2SD0592A	Silicon NPN epitaxial planar type www.DataSheet4U.net Transistors 2SD0592A (2SD592A) Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB0621A (2SB621A) ■ Features 0.7±0.2 Unit: mm 5.0±0.2 4.0±0.2 • Large collector power dissipation PC • Low collector-emitter saturation voltage V	Panasonic Semiconductor	transistor
2	2SD0601	Silicon NPN epitaxial planer type Transistor 2SD601A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB709A 2.8 –0.3 +0.2 Unit: mm s Features q q q 0.65±0.15 +0.25 1.5 –0.05 0.65±0.15 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Mini type pac	Panasonic Semiconductor	transistor
3	2SD0601A	Silicon NPN epitaxial planer type Transistor Transistor 2SD0601A (2SD601A) Silicon NPN epitaxial planer type For general amplification Complementary to 2SB0709A (2SB709A) I Features G High foward current transfer ratio hFE. G Low collector to emitter saturation voltage VCE(sat). G Mini type package, allowing downsizing of the equipment and a	Panasonic Semiconductor	transistor
4	2SD0602	Silicon NPN epitaxial planer type Transistors 2SD0602A Silicon NPN epitaxial planer type Unit: mm For general amplification Complementary to 2SB0710A I Features • Low collector to emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and t	Panasonic Semiconductor	transistor
5	2SD0602A	Silicon NPN epitaxial planer type Transistors 2SD0602A Silicon NPN epitaxial planer type Unit: mm For general amplification Complementary to 2SB0710A I Features • Low collector to emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and t	Panasonic Semiconductor	transistor
6	2SD0638	Silicon NPN epitaxial planar type www.DataSheet4U.net Transistors 2SD0638 (2SD638) Silicon NPN epitaxial planar type For medium-power general amplification Complementary to 2SB0643 (2SB643) (0.4) (1.5) (1.5) Unit: mm 6.9±0.1 2.5±0.1 (1.0) 2.0±0.2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitt	Panasonic Semiconductor	transistor
7	2SD0662	Silicon NPN epitaxial planar type www.DataSheet4U.net Transistors 2SD0662, 2SD0662B (2SD662, 2SD662B) Silicon NPN epitaxial planar type For high breakdown voltage general amplification 6.9±0.1 2.5±0.1 (1.0) Unit: mm (0.4) (1.5) 2.0±0.2 • High collector-emitter voltage (Base open) VCEO • High transition frequency fT •	Panasonic Semiconductor	transistor

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Número de pieza	Descripción	Fabricantes	PDF
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