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부품번호 | PN10HN60-CAI-T1 기능 |
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기능 | N-Channel Superjunction MOSFET | ||
제조업체 | Chipown | ||
로고 | |||
PN10HN60
N-Channel Superjunction MOSFET
600V, 10A, 0.38Ω
Chipown
NeoFET®
General Description
The NeoFET, Chipown’s new generation of high voltage super-junction MOSFETs, based on an advanced deep
trench filling process technologies. The NeoFET MOSFET achieves an approximate 70% reduction in specific
on-resistance compared to that of a conventional MOSFET. By combining the experience of the leading SJ
MOSFET supplier, utilizing this advanced technology and precise process control, NeoFET provides superior
switching performance and ruggedness. The NeoFET fits the PC ATX Power, Server, Telecom, Adapter, LCD and
PDP TV, Lighting, UPS and industrial power applications.
Features
■ RDS(on) = 0.34Ω ( Typ.)@ VGS = 10V, ID = 5A
■ Extremely high dv/dt capablity
■ Very high commutation ruggedness
■ Extremely low losses due to very low Rdson*Qg
■ Ultra low gate charge ( Typ. Qg = 25nC)
■ Low effective output capacitance
■ 100% avalanche tested
■ JEDEC qualified, Pb-free plating
Applications
■ PC ATX Power
■ Adapter
■ LCD and PDP TV
■ Lighting
■ Server, Telecom,
■ UPS
■ Switching applications
Pin Assignments
TO-220
TO-220FP
Order codes
PN10HN60-CAI-T1
PN10HN60-CBI-T1
Package
TO220
TO220FP
8/F, ChuangYuan Building No.21-1 Changjiang Road, Wuxi New Destrict Tel: +86(510)8521-7718 http://www.chipown.com.cn
Rev.A.1110
1/8
Typical Performance Characteristics
Figure1. On-Region Characteristics
PN10HN60
Figure2. Transfer Characteristics
Figure3. On-Resistance Variation vs.Drain Current and
Gate Voltage
Figure4. Body Diode Forward Voltage Variation vs.
Source Current and Temperature
Figure5. Capacitance Characteristics
Figure6. Gate Charge Characteristics
8/F, ChuangYuan Building No.21-1 Changjiang Road, Wuxi New Destrict Tel: +86(510)8521-7718 http://www.chipown.com.cn
Rev.A.1110
4/8
4페이지 Package Dimensions(TO-220)
Table . TO-220 mechanical data
Size
symbol
A
A1
A2
b
b1
b2
b3
c
c1
D
D1
D2
Min(mm)
4.40
1.22
2.59
0.77
0.76
1.23
1.22
0.34
0.33
15.15
9.05
11.40
Max(min)
4.70
1.32
2.79
0.90
0.86
1.36
1.32
0.47
0.43
15.75
9.25
12.88
Size
symbol
E
E1
e
e1
H1
L
L1
ΦP
Q
θ1
θ2
Figure . Package dimensions
PN10HN60
Min(mm)
9.96
6.68
2.44
4.98
6.10
12.70
-
3.80
2.60
5°
1°
Max(min)
10.36
8.89
2.64
5.18
6.50
13.12
3.90
3.88
2.90
9°
5°
8/F, ChuangYuan Building No.21-1 Changjiang Road, Wuxi New Destrict Tel: +86(510)8521-7718 http://www.chipown.com.cn
Rev.A.1110
7/8
7페이지 | |||
구 성 | 총 8 페이지수 | ||
다운로드 | [ PN10HN60-CAI-T1.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
PN10HN60-CAI-T1 | N-Channel Superjunction MOSFET | Chipown |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |