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PDF TSM60NB260 Data sheet ( Hoja de datos )
| Número de pieza | TSM60NB260 | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | Taiwan Semiconductor | |
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TSM60NB260
Taiwan Semiconductor
N-Channel Power MOSFET
600V, 13A, 0.26Ω
FEATURES
● Super-Junction technology
● High performance, small RDS(ON)*Qg figure of merit (FOM)
● High ruggedness performance
● 100% UIS tested
● High commutation performance
● Pb-free plating
● Compliant to RoHS Directive 2011/65/EU and in
accordance to WEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE
UNIT
VDS
RDS(on) (max)
Qg
600
0.26
30
V
Ω
nC
APPLICATION
● Power Supply
● AC/DC LED Lighting
ITO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS 600
Gate-Source Voltage
Continuous Drain Current (Note 1)
Pulsed Drain Current (Note 2)
TC = 25°C
TC = 100°C
Total Power Dissipation @ TC = 25°C
Single Pulsed Avalanche Energy (Note 3)
Single Pulsed Avalanche Current (Note 3)
Operating Junction and Storage Temperature Range
VGS
ID
IDM
PDTOT
EAS
IAS
TJ, TSTG
±30
13
7.8
39
32.1
196.9
2.5
- 55 to +150
UNIT
V
V
A
A
A
W
mJ
A
°C
THERMAL PERFORMANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Junction to Case Thermal Resistance
RӨJC
3.9 °C/W
Junction to Ambient Thermal Resistance
RӨJA
62 °C/W
Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined
at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board
design. RӨJA shown below for single device operation on FR-4 PCB with minimum recommended footprint in still air.
1 Version: A1511
1 page  
CHARACTERISTICS CURVES
(TC = 25°C unless otherwise noted)
Capacitance vs. Drain-Source Voltage
TSM60NB260
Taiwan Semiconductor
BVDSS vs. Junction Temperature
VDS, Drain to Source Voltage (V)
Maximum Safe Operating Area (ITO-220)
TJ, Junction Temperature (°C)
VDS, Drain to Source Voltage (V)
Continuous Drain Current (A)
Normalized Thermal Transient Impedance, Junction-to-Case (ITO-220)
101
100
10-1
10-12 0-4
Duty=0.5
Duty=0.2
Duty=0.1
Duty=0.05
Duty=0.02
Duty=0.01
Single pulse
10-3 10-2 10-1
Square Wave Pulse Duration (s)
100
101
5 Version: A1511
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TSM60NB260.PDF ] | |
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