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부품번호 | TLP2767 기능 |
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기능 | GaAlAs Infrared LED & Photo IC | ||
제조업체 | Toshiba | ||
로고 | |||
전체 20 페이지수
Photocouplers GaAℓAs Infrared LED & Photo IC
TLP2767
TLP2767
1. Applications
• Factory Networking
• High-Speed Digital Interfacing for Instrumentation and Control Devices
• I/O Interface Boards
2. General
The TLP2767 is 50-Mbps high speed photocoupler in SO6L package.
The TLP2767 consists of high-output GaAℓAs light-emitting diode coupled with integrated high gain, high speed
photodetector, and has high speed switching performance at operation temperature from -40 to 125 and at
supply voltage from 2.7 V to 5.5 V.
The detector has a totem-pole output stage with current sourcing and sinking capabilities. The TLP2767 has an
internal Faraday shield that provides a guaranteed common-mode transient immunity of ±25 kV/µs.
3. Features
(1) Package: SO6L
(2) Data transfer rate: 50 MBd (typ.) (NRZ)
(3) Threshold input current: 4.0 mA (max)
(4) Supply voltage: 2.7 to 5.5 V
(5) Operating temperature: -40 to 125
(6) Propagation delay time: 20 ns (max)
(7) Pulse width distortion: 8 ns (max)
(8) Isolation voltage: 5000 Vrms (min)
(9) Safety standards
UL-approved UL1577 File No.E67349
cUL-approved CSA Component Acceptance Service No.5A File No.E67349
VDE-approved: Option (D4) EN60747-5-5 (approval pending) (Note 1)
Note 1: When an EN60747-5-5 approved type is needed, please designate the Option (D4).
©2016 Toshiba Corporation
1
Start of commercial production
2016-05
2016-04-22
Rev.1.0
TLP2767
9. Electrical Characteristics (Note)
(Unless otherwise specified, Ta = -40 to 125 , VDD = 2.7 to 5.5 V)
Characteristics
Input forward voltage
Input forward voltage
temperature coefficient
Symbol
VF
∆VF/∆Ta
Test
Circuit
Test Condition
IF = 5.5 mA
IF = 5.5 mA, Ta = 25
IF = 5.5 mA
Min Typ.
1.2
1.3 1.6
-1.58
Input reverse current
Input capacitance
Low-level output voltage
High-level output voltage
Low-level supply current
IR VR = 5 V, Ta = 25
Ct
V = 0 V, f = 1 MHz , Ta = 25
26
VOL Fig. IO = 20 µA, IF = 5.5 mA
12.1.1 IO = 3.2 mA, IF = 5.5 mA
0.002
0.1
VOH Fig. IO = -20 µA, VF = 0.8 V
12.1.2 IO = -3.2 mA, VF = 0.8 V
VDD - 0.1 VDD - 0.01
VDD - 1.0 VDD - 0.2
IDDL Fig. IF = 5.5 mA
12.1.3
1.6
High-level supply current
IDDH
Fig. IF = 0 mA
12.1.4
1.7
Threshold input current (H/L)
IFHL
IO = 3.2 mA, VO < 0.4 V
Note: All typical values are at VDD = 5 V, Ta = 25 , unless otherwise noted
1.7
10. Isolation Characteristics
(Unless otherwise specified, Ta = 25 )
Max Unit
2.1 V
1.9
mV/
10 µA
pF
0.1 V
0.4
2.5 mA
2.5
4
Characteristics
Symbol Note
Test Condition
Min Typ. Max Unit
Total capacitance (input to
output)
CS (Note 1) VS = 0 V, f = 1 MHz
0.8 pF
Isolation resistance
Isolation voltage
RS (Note 1) VS = 500 V, R.H. ≤ 60 %
BVS (Note 1) AC, 60 s
AC, 1s, in oil
1×1012
5000
1×1014
10000
Ω
Vrms
DC, 60 s, in oil
10000
Vdc
Note 1: This device is considered as a two-terminal device: Pins 1, 2 and 3 are shorted together, and pins 4, 5 and 6
are shorted together.
©2016 Toshiba Corporation
4
2016-04-22
Rev.1.0
4페이지 12.2. Characteristics Curves (Note)
TLP2767
Fig. 12.2.1 IF - VF
Fig. 12.2.2 IF - Ta
Fig. 12.2.3 VOL - Ta
Fig. 12.2.4 VOL - Ta
Fig. 12.2.5 VOH - Ta
Fig. 12.2.6 VOH - Ta
©2016 Toshiba Corporation
7
2016-04-22
Rev.1.0
7페이지 | |||
구 성 | 총 20 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
TLP2767 | GaAlAs Infrared LED & Photo IC | Toshiba |
TLP2768 | GaAs Infrared LED & Photo IC | Toshiba |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |