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Datasheet DB3510T Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | DB3510T | Diode, Rectifier |  American Microsemiconductor | diode |
DB3 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | DB3 | SILICON BIDIRECTIONAL DIACS DB3, DB4, DC34
SILICON BIDIRECTIONAL DIACS
The glass passivated, three-layer, two terminal, axial lead, hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low breakover current at breakover voltage as they withstand peak pulse current. These diacs are int  SEMTECH data | | |
| 2 | DB3 | SILICON BIDIRECTIONAL DIAC MCC TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth
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Features
l The three layer, two terminal, axial lead, hermetically sealed
diacs are designed specifically for triggering thyristors.
• Lead Free  MCC data | | |
| 3 | DB3 | 150mW Bi-directional Trigger Diode Small Signal Diode
DB3-DB3TG 150mW Bi-directional Trigger Diode
DO-35 Axial Lead HERMETICALLY SEALED GLASS
Features
Designed for through-Hole Device Type Mounting. Hermetically Sealed Glass. All external suface are corrosion resistant and
terminals are readily solderable. High reliability  Taiwan Semiconductor diode | | |
| 4 | DB3 | 150mW Bi-directional Trigger Diodes DB3-DB3TG — 150mW Bi-directional Trigger Diodes
DB3-DB3TG
150mW Bi-directional Trigger Diodes
Features
• VBO : 32V Version • Low break-over current • DO-35 package (JEDEC) • Hermetically sealed glass • Compression bonded construction • All external surfaces are corrosion resistant and  Fairchild Semiconductor diode | | |
| 5 | DB3 | DIAC DB3 DB4 SMDB3
®
DIAC
FEATURES
s VBO : 32V and 40V s LOW BREAKOVER CURRENT
DESCRIPTION
Functioning as a trigger diode with a fixed voltage reference, the DB3/DB4 series can be used in conjunction with triacs for simplified gate control circuits or as a starting element in fluorenscent lamp ballast  STMicroelectronics data | | |
| 6 | DB3 | BIDIRECTIONAL TRIGGER DIODE SHANGHAI SUNRISE ELECTRONICS CO., LTD. DB3
BIDIRECTIONAL TRIGGER DIODE
BREAKOVER VOLTAGE: 32V POWER: 150mW
FEATURES
• VBO: 26 ~ 36V version • Low breakover current • High temperature soldering guaranteed: 250oC/10S/9.5mm lead length at 5 lbs tension
TECHNICAL SPECIFICATION
DO - 35
1.0 (25.4)  Shanghai Sunrise Electronics diode | | |
| 7 | DB3 | SILICON BIDIRECTIONAL DIAC CE
CHENYI ELECTRONICS FEATURES
The three layer,two terminal, axial lead, hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low breakover current at breakover voltage as they withstand peak pulse current,The breakover symmetry is within three volts(DB3,DC  Shanghai Lunsure Electronic Tech data | |
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