|
|
|
부품번호 | NJD2873 기능 |
|
|
기능 | Power Transistors | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 5 페이지수
NJD2873, NJVNJD2873
Power Transistors
NPN Silicon DPAK For Surface Mount
Applications
Designed for high−gain audio amplifier applications.
Features
• High DC Current Gain
• Low Collector−Emitter Saturation Voltage
• High Current−Gain − Bandwidth Product
• Epoxy Meets UL 94 V−0 @ 0.125 in
• NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Base Current
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
VCB
VCEO
VEB
IC
ICM
IB
PD
50 Vdc
50 Vdc
5 Vdc
2 Adc
3 Adc
0.4 Adc
15 W
0.1 W/°C
Total Device Dissipation
@ TA = 25°C*
Derate above 25°C
PD
1.68 W
0.011
W/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg − 65 to +175 °C
ESD − Human Body Model
HBM
3B
V
ESD − Machine Model
MM C V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2013
September, 2016 − Rev. 17
1
www.onsemi.com
SILICON
POWER TRANSISTORS
2 AMPERES
50 VOLTS
15 WATTS
COLLECTOR
2,4
1
BASE
3
EMITTER
4
12
3
DPAK
CASE 369C
STYLE 1
MARKING DIAGRAM
AYWW
J
2873G
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Device
ORDERING INFORMATION
Device
Package Shipping†
NJD2873T4G
DPAK
2,500
(Pb−Free) Units / Reel
NJVNJD2873T4G
DPAK
2,500
(Pb−Free) Units / Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NJD2873T4/D
NJD2873, NJVNJD2873
1.0 1000
500 mA
TA = 25°C
Cibo
0.8
10 mA
0.6
100
1 A Cobo
0.4 100 mA
IC = 2 A
10
0.2
0
0.01
0.1 1
10 100
IB, BASE CURRENT (mA)
Figure 6. Saturation Region
100
VCE = 10 V
TA = 25°C
1000
1
0.1
10000
1000
100 100
TA = 25°C
1 10
VR, REVERSE VOLTAGE (V)
Figure 7. Capacitance
100
10 mS
100 mS
1 mS
1S
10
01
1
10
100
1000
10000
1
10 100
IC, COLLECTOR CURRENT (mA)
Figure 8. Saturation Region
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 9. Capacitance
1
0.7 D = 0.5
0.5
0.3 0.2
0.2 0.1
0.05
0.1
0.07
0.05 0.02
0.01
0.03
0 (SINGLE PULSE)
0.02
0.01
0.02
0.05 0.1
0.2
RqJC(t) = r(t) qJC
RqJC = 10°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) qJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.5 1
2
5 10
t, TIME (ms)
Figure 10. Thermal Response
20
50 100 200
www.onsemi.com
4
4페이지 | |||
구 성 | 총 5 페이지수 | ||
다운로드 | [ NJD2873.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
NJD2873 | Silicon NPN Power Transistor | Inchange Semiconductor |
NJD2873 | Power Transistors | ON Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |