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PDF NSVMMBD354LT1G Data sheet ( Hoja de datos )
| Número de pieza | NSVMMBD354LT1G | |
| Descripción | Dual Hot Carrier Mixer Diodes | |
| Fabricantes | ON Semiconductor | |
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MMBD352LT1G,
MMBD353LT1G,
NSVMMBD353LT1G,
MMBD354LT1G,
NSVMMBD354LT1G,
MMBD355LT1G
Dual Hot Carrier Mixer
Diodes
These devices are designed primarily for UHF mixer applications
but are suitable also for use in detector and ultra−fast switching
circuits.
Features
Very Low Capacitance − Less Than 1.0 pF @ Zero V
Low Forward Voltage − 0.5 V (Typ) @ IF = 10 mA
AEC Qualified and PPAP Capable
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol Value
Unit
Continuous Reverse Voltage
VR 7.0 VCC
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board,
(Note 1)
TA = 25C
Derate above 25C
Symbol
PD
Max
225
1.8
Unit
mW
mW/C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2)
TA = 25C
Derate above 25C
RqJA
PD
556 C/W
300 mW
2.4 mW/C
Thermal Resistance, Junction−to−Ambient RqJA
Junction and Storage Temperature
TJ, Tstg
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
417
−55 to +150
C/W
C
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 8
1
http://onsemi.com
SOT−23 (TO−236)
CASE 318
1
ANODE
3
CATHODE/ANODE
2
CATHODE
MMBD352LT1G
STYLE 11
12
CATHODE 3
ANODE
CATHODE/ANODE
MMBD353LT1G
NSVMMBD353LT1G
STYLE 19
3
CATHODE
1 ANODE
2 ANODE
MMBD354LT1G
NSVMMBD354LT1G
STYLE 9
ANODE 3
1 CATHODE
2 CATHODE
MMBD355LT1G
STYLE 12
MARKING DIAGRAM
Mxx M G
G
1
Mxx = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in the
package dimensions section on page 2 of this data sheet.
Publication Order Number:
MMBD352LT1/D
1 page | ||
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