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PDF CJ3139KDW-G Data sheet ( Hoja de datos )
| Número de pieza | CJ3139KDW-G | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Comchip | |
| Logotipo |  |
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MOSFET
CJ3139KDW-G (Dual P-Channel )
RoHS Device
Comchip
SMD Diode Specialist
V(BR)DSS
RDS(on)MAX
520mΩ @ -4.5V
-20V
700mΩ @ -2.5V
950mΩ(TYP) @ -1.8V
ID
-0.66A
Features
- High-side switching
- Low on-resistance
- Low threshold
- Fast switching speed
Mechanical data
- Case: SOT-363, molded plastic.
- Terminals: Solderable per MIL-STD-750,
method 2026.
- Weight: 0.006 grams (approx.)
SOT-363
0.053(1.35)
0.045(1.15)
0.045(1.15)
0.041(1.05)
0.087(2.20)
0.079(2.00)
6 54
1 23
0.055(1.40)
0.047(1.20)
0.006(0.15)
0.003(0.08)
0.096(2.45)
0.085(2.15)
0.014(0.35)
0.006(0.15)
0.004(0.10)
0.000(0.00)
0.018(0.46)
0.010(0.26)
Dimensions in inches and (millimeter)
Circuit diagram
G : Gate
S : Source
D : Drain
D1
6
G2
5
S2
4
Maximum Ratings (at Ta=25 °C unless otherwise noted)
Parameter
Symbol
Drain-source voltage
Typ. Gate-source voltage
VDSS
VGS
Drain current-Continuous
ID(DC)
Drain current-pulsed (note1)
Power dissipation (note 2)
Thermal resistance from junction to ambient
Junction temperature range
Storage temperature range
IDM(pulse)
PD
RΘJA
TJ
TSTG
123
S1 G1 D2
Value
-20
±12
-0.66
-2.64
150
833
-40 to +150
-55 to +150
Unit
V
V
A
A
mW
°C/W
°C
°C
Company reserves the right to improve product design , functions and reliability without notice.
QW-BTR52
Comchip Technology CO., LTD.
REV:A
Page 1
1 page  
MOSFET
Marking Code
Part Number Marking Code
CJ3139KDW-G
39K
Suggested PAD Layout
SIZE
A
B
C
D
E
SOT-363
(mm) (inch)
0.80 0.032
0.40 0.016
0.65 0.026
1.94 0.076
2.74 0.108
654
. 39K
1 23
C
A
B
Standard Packaging
Case Type
SOT-363
REEL PACK
REEL
( pcs )
Reel Size
(inch)
3,000
7
DE
Company reserves the right to improve product design , functions and reliability without notice.
QW-BTR52
Comchip Technology CO., LTD.
REV:A
Page 5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet CJ3139KDW-G.PDF ] | |
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