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부품번호 | VNV35N07-E 기능 |
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기능 | fully autoprotected Power MOSFET | ||
제조업체 | STMicroelectronics | ||
로고 | |||
전체 24 페이지수
VNP35N07-E, VNB35N07-E,
VNV35N07-E
OMNIFET: fully autoprotected Power MOSFET
3
2
1
TO-220
3
1
D2PAK
10
1
PowerSO-10
Features
Type
VNP35N07-E
VNB35N07-E
VNV35N07-E
Vclamp
70 V
70 V
70 V
RDS(on)
0.028 Ω
0.028 Ω
0.028 Ω
Ilim
35 A
35 A
35 A
Datasheet - production data
• Diagnostic feedback through input pin
• ESD protection
• Direct access to the gate of the Power
MOSFET (analog driving)
• Compatible with standard Power MOSFET
• Standard TO-220 package
• Compliant with 2002/95/EC European directive
Description
The VNP35N07-E, VNB35N07-E and
VNV35N07-E are monolithic devices made using
STMicroelectronics VIPower® technology,
intended for replacement of standard Power
MOSFETs in DC to 50 KHz applications.
Built-in thermal shutdown, linear current limitation
and overvoltage clamp protect the chip in harsh
environments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
• Automotive qualified
• Linear current limitation
• Thermal shutdown
• Short circuit protection
• Integrated clamp
• Low current drawn from input pin
Package
TO-220
D2PAK
PowerSO-10
Table 1. Device summary
Order codes
Tube
VNP35N07-E
VNB35N07-E
VNV35N07-E
Tape and reel
VNP35N07TR-E
VNB35N07TR-E
VNV35N07TR-E
February 2015
This is information on a product in full production.
DocID023779 Rev 3
1/24
www.st.com
List of figures
List of figures
VNP35N07-E, VNB35N07-E, VNV35N07-E
Figure 1.
Figure 2.
Figure 3.
Figure 4.
Figure 5.
Figure 6.
Figure 7.
Figure 8.
Figure 9.
Figure 10.
Figure 11.
Figure 12.
Figure 13.
Figure 14.
Figure 15.
Figure 16.
Figure 17.
Figure 18.
Figure 19.
Figure 20.
Figure 21.
Figure 22.
Figure 23.
Figure 24.
Figure 25.
Figure 26.
Figure 27.
Figure 28.
Figure 29.
Figure 30.
Figure 31.
Figure 32.
Figure 33.
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Switching times test circuits for resistive load. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Input charge test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Unclamped inductive load test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Test circuit for inductive load switching & diode recovery times . . . . . . . . . . . . . . . . . . . . . 10
Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Unclamped inductive waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Thermal impedance for TO-220 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Derating curve . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Static drain-source on resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Static drain-source on resistance vs input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Output characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Transconductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Static drain-source on resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Input charge vs input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Normalized on resistance vs temperature (part 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Normalized on resistance vs temperature (part 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Normalized input threshold voltage vs temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Capacitance variations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Turn-on current slope (part 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Turn-on current slope (part 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Turn-off drain-source voltage slope (part 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Turn-off drain-source voltage slope (part 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Switching time resistive load (part 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Switching time resistive load (part 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Current limit vs junction temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Source drain diode forward characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Switching time resistive load. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Step response current Limit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Thermal impedance for D2PAK/ PowerSO-10 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
TO-220 package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
D2PAK package dimensions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
PowerSO-10 package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
4/24 DocID023779 Rev 3
4페이지 VNP35N07-E, VNB35N07-E, VNV35N07-E
Electrical specification
2.3
Electrical characteristics
Tcase = 25°C unless otherwise specified.
Symbol
Parameter
Table 4. Off
Test Conditions
VCLAMP Drain-source clamp voltage ID = 200 mA; Vin = 0 V
VCLTH
Drain-source clamp threshold
voltage
ID = 2 mA; Vin = 0 V
VINCL
Input-source reverse clamp
voltage
Iin = -1 mA
IDSS
IISS
Zero input voltage drain
current (Vin = 0 V)
Supply current from input pin
VDS = 13 V; Vin = 0 V
VDS = 25 V; Vin = 0 V
VDS = 0 V; Vin = 10 V
Min Typ Max Unit
60 70 80
V
55 V
-1 -0.3 V
50 mA
200 µA
250 500 μA
Table 5. On
Symbol
Parameter
Test Conditions
VIN(th)(1) Input threshold voltage VDS = Vin; ID+Iin = 1 mA
RDS(on)(1)
Static drain-source on
resistance
Vin = 10 V; ID = 18 A
Vin = 5 V; ID = 18 A
1. Pulsed: Pulse duration = 300 ms, duty cycle 1.5%.
Min Typ
Max Unit
0.8 — 3 V
— 0.028 Ω
— 0.035 Ω
Table 6. Dynamic
Symbol
Parameter
Test Conditions
Min
gfs(1)
Forward
transconductance
VDS = 13 V; ID = 18 A
COSS Output capacitance VDS = 13 V; f = 1 MHz; Vin = 0 V
1. Pulsed: Pulse duration = 300 ms, duty cycle 1.5%.
20
Typ Max Unit
25 S
980 1400 pF
Symbol
Parameter
td(on)(1)
tr(1)
td(off)(1)
tf(1)
td(on)(1)
tr(1)
td(off)(1)
tf(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 7. Switching
Test Conditions
VDD = 28 V; Id = 18 A;
Vgen = 10 V; Rgen = 10 Ω
(see Figure 2)
VDD = 28 V; Id = 18 A;
Vgen = 10 V; Rgen = 1000 Ω
(see Figure 2)
Min Typ Max Unit
— 100 200 ns
— 350 600 ns
— 650 1000 ns
— 200 350 ns
— 500 800 μs
— 2.7 4.2 μs
— 10 16 μs
— 4.3 6.5 μs
DocID023779 Rev 3
7/24
23
7페이지 | |||
구 성 | 총 24 페이지수 | ||
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
VNV35N07-E | fully autoprotected Power MOSFET | STMicroelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |