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FSAM15SH60A 데이터시트 PDF




Fairchild Semiconductor에서 제조한 전자 부품 FSAM15SH60A은 전자 산업 및 응용 분야에서
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부품번호 FSAM15SH60A 기능
기능 Motion SPM2 module
제조업체 Fairchild Semiconductor
로고 Fairchild Semiconductor 로고


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FSAM15SH60A 데이터시트, 핀배열, 회로
FSAM15SH60A
Motion SPM® 2 Series
Features
• UL Certified No. E209204 (UL1557)
• 600 V - 15 A 3-Phase IGBT Inverter with Integral
Gate Drivers and Protection
• Low-Loss, Short-Circuit Rated IGBTs
• Low Thermal Resistance Using Ceramic
Substrate
• Separate Open-Emitter Pins from Low Side IGBTs
for Three-Phase Current Sensing
• Single-Grounded Power Supply
• Optimized for 15 kHz Switching Frequency
• Built-in NTC Thermistor for Temperature
Monitoring
• Inverter Power Rating of 0.8 kW / 100~253 VAC
• Adjustable Current Protection Level via Selection
of Sense-IGBT Emitter's External Rs
• Isolation Rating: 2500 Vrms / min.
January 2014
General Description
FSAM15SH60A is a Motion SPM® 2 module
providing a fully-featured, high-performance inverter
stage for AC Induction, BLDC, and PMSM motors.
These modules integrate optimized gate drive of
the built-in IGBTs to minimize EMI and losses, while
also providing multiple on-module protection
features including under-voltage lockouts, over-
current shutdown, thermal monitoring, and fault
reporting. The built-in, high-speed HVIC requires
only a single supply voltage and translates the
incoming logic-level gate inputs to the high-voltage,
high-current drive signals required to properly drive
the module's internal IGBTs. Separate negative
IGBT terminals are available for each phase to
support the widest variety of control algorithms.
Applications
Motion Control - Home Appliance / Industrial Motor
Resource
AN-9043 - Motion SPM® 2 Series User's Guide
Figure 1. Package Overview
Package Marking and Ordering Information
Device
Device Marking
Package
FSAM15SH60A
FSAM15SH60A
S32AA-032
©2003 Fairchild Semiconductor Corporation
FSAM15SH60A Rev. C8
1
Packing Type
Rail
Quantity
8
www.fairchildsemi.com




FSAM15SH60A pdf, 반도체, 판매, 대치품
Internal Equivalent Circuit and Input/Output Pins
(22) VB(W)
(21) VCC(WH)
(20) IN(WH)
(23) VS(W)
(18) VB(V)
(17) VCC(VH)
(16) COM(H)
(15) IN(VH)
(19) VS(V)
(13) VB(U)
(12) VCC(UH)
(11) IN(UH)
(14) VS(U)
(10) RSC
(9) CSC
(8) CFOD
(7) VFO
(6) COM(L)
(5) IN(WL)
(4) IN(VL)
(3) IN(UL)
(2) COM(L)
(1) VCC(L)
VB
VCC
COM
IN
OUT
VS
VB
VCC
COM
IN
OUT
VS
VB
VCC
COM
IN
OUT
VS
C(SC) OUT(WL)
C(FOD)
VFO
IN(WL) OUT(VL)
IN(VL)
IN(UL)
COM(L)
OUT(UL)
VCC
THERMISTOR
P (32)
W (31)
V (30)
U (29)
NW (28)
NV (27)
NU (26)
RTH (25)
VTH (24)
Figure 3. Internal Block Diagram
1st Notes:
1. Inverter low-side is composed of three sense-IGBTs including freewheeling diodes for each IGBT and one control IC which has gate driving, current-sensing and
protection functions.
2. Inverter power side is composed of four inverter DC-link input pins and three inverter output pins.
3. Inverter high-side is composed of three normal-IGBTs including freewheeling diodes and three drive ICs for each IGBT.
©2003 Fairchild Semiconductor Corporation
FSAM15SH60A Rev. C8
4
www.fairchildsemi.com

4페이지










FSAM15SH60A 전자부품, 판매, 대치품
Electrical Characteristics (TJ = 25°C, unless otherwise specified.)
Control Part
Item
Symbol
Condition
Quiescent VCC Supply Cur-
rent
Quiescent VBS Supply Cur-
rent
Fault Output Voltage
Short-Circuit Trip Level
Sensing Voltage
of IGBT Current
IQCCL
IQCCH
IQBS
VFOH
VFOL
VSC(ref)
VSEN
VCC = 15 V
IN(UL, VL, WL) = 5V
VCC(L) - COM(L)
VCC = 15 V
IN(UH, VH, WH) = 5V
VCC(UH), VCC(VH), VCC(WH) -
COM(H)
VBS = 15 V
IN(UH, VH, WH) = 5V
VB(U) - VS(U), VB(V) -VS(V),
VB(W) - VS(W)
VSC = 0 V, VFO Circuit: 4.7 kto 5 V Pull-up
VSC = 1 V, VFO Circuit: 4.7 kto 5 V Pull-up
VCC = 15 V (Note 5)
RSC = 50 , RSU = RSV = RSW = 0 and IC = 22.5 A
(See a Figure 6)
Supply Circuit Under-
Voltage Protection
Fault Output Pulse Width
ON Threshold Voltage
OFF Threshold Voltage
ON Threshold Voltage
OFF Threshold Voltage
Resistance of Thermistor
UVCCD
UVCCR
UVBSD
UVBSR
tFOD
VIN(ON)
VIN(OFF)
VIN(ON)
VIN(OFF)
RTH
Detection Level
Reset Level
Detection Level
Reset Level
CFOD = 33 nF (2nd Note 6)
High-Side
Applied between IN(UH),
IN(VH), IN(WH) - COM(H)
Low-Side
Applied between IN(UL),
IN(VL), IN(WL) - COM(L)
@ TTH = 25°C (2nd Note 7, Figure 5)
@ TTH = 100°C (2nd Note 7, Figure 5)
Min.
-
-
-
4.5
-
0.45
0.45
11.5
12.0
7.3
8.6
1.4
-
3.0
-
3.0
-
-
Typ. Max. Unit
- 26 mA
- 130 A
- 420 A
--
- 1.1
0.51 0.56
0.51 0.56
V
V
V
V
12.0 12.5
12.5 13.0
9.0 10.8
10.3 12.0
1.8 2.0
- 0.8
--
- 0.8
--
50 -
3.4 -
V
V
V
V
ms
V
V
V
V
k
k
2nd Notes:
5. Short-circuit protection is functioning only at the low-sides. It would be recommended that the value of the external sensing resistor (RSC) should be selected
around 50 in order to make the SC trip-level of about 22.5A at the shunt resistors (RSU, RSV, RSW) of 0. For the detailed information about the relationship
6.
between the
The fault-out
external sensing resistor (RSC) and the shunt
pulse width tFOD depends on the capacitance
resistors (RSU, RSV, RSW), please see Figure 6.
value of CFOD according to the following approximate
equation:
CFOD
=
18.3
x
10-6
x
tFOD
[F]
7. TTH is the temperature of thermistor itself. To know case temperature (TC), please make the experiment considering your application.
R-T Curve
70k
60k
50k
40k
30k
20k
10k
0
20 30 40 50 60 70 80 90 100 110 120
Temperature TTH[]
Figure 5. R-T Curve of The Built-in Thermistor
©2003 Fairchild Semiconductor Corporation
FSAM15SH60A Rev. C8
7
www.fairchildsemi.com

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