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부품번호 | MJE700G 기능 |
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기능 | Plastic Darlington Complementary Silicon Power Transistors | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 6 페이지수
MJE700G, MJE702G,
MJE703G (PNP), MJE800G,
MJE802G, MJE803G (NPN)
Plastic Darlington
Complementary Silicon
Power Transistors
These devices are designed for general−purpose amplifier and
low−speed switching applications.
Features
• High DC Current Gain − hFE = 2000 (Typ) @ IC
= 2.0 Adc
• Monolithic Construction with Built−in Base−Emitter Resistors to
Limit Leakage − Multiplication
• Choice of Packages − MJE700 and MJE800 Series
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector−Emitter Voltage
MJE700G, MJE800G
MJE702G, MJE703G, MJE802G,
MJE803G
VCEO
60
80
Vdc
Collector−Base Voltage
MJE700G, MJE800G
MJE702G, MJE703G, MJE802G,
MJE803G
VCB Vdc
60
80
Emitter−Base Voltage
Collector Current
Base Current
Total Power Dissipation
@ TC = 25_C
Derate above 25_C
VEB 5.0 Vdc
IC 4.0 Adc
IB 0.1 Adc
PD
40 W
0.32 mW/_C
Operating and Storage Junction
Temperature Range
TJ, Tstg –55 to +150 _C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Symbol
RqJC
RqJA
Max
3.12
83.3
Unit
_C/W
_C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 12
1
http://onsemi.com
4.0 AMPERE
DARLINGTON POWER
TRANSISTORS
COMPLEMENTARY SILICON
40 WATT
NPN
COLLECTOR 2, 4
PNP
COLLECTOR 2, 4
BASE
3
BASE
3
EMITTER 1
MJE800
MJE802
MJE803
EMITTER 1
MJE700
MJE702
MJE703
TO−225
CASE 77−09
STYLE 1
123
MARKING DIAGRAM
YWW
JEx0yG
Y = Year
WW = Work Week
JEx0y = Device Code
x = 7 or 8
y = 0, 2, or 3
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Publication Order Number:
MJE700/D
MJE700G, MJE702G, MJE703G (PNP), MJE800G, MJE802G, MJE803G (NPN)
PNP
MJE700 Series
6.0 k
4.0 k TJ = 125°C
3.0 k 25°C
2.0 k
VCE = 3.0 V
NPN
MJE800 Series
6.0 k
TJ = 125°C
4.0 k
3.0 k
2.0 k 25°C
VCE = 3.0 V
- 55°C
1.0 k
800
600
- 55°C
1.0 k
800
600
400
300
0.04 0.06
0.1 0.2 0.4 0.6 1.0
IC, COLLECTOR CURRENT (AMP)
2.0
4.0
400
300
0.04 0.06
Figure 7. DC Current Gain
0.1 0.2 0.4 0.6 1.0
IC, COLLECTOR CURRENT (AMP)
2.0
4.0
3.4
3.0
IC = 1.0 A
2.6 0.5 A
2.0 A
TJ = 25°C
4.0 A
3.4
3.0
IC =
0.5 A
2.6
1.0 A 2.0 A
4.0 A
TJ = 25°C
2.2 2.2
1.8 1.8
1.4 1.4
1.0
0.6
0.1 0.2
1.0
0.5 1.0 2.0 5.0 10 20 50 100
0.6
0.1 0.2
0.5 1.0 2.0
5.0 10 20
IB, BASE CURRENT (mA)
IB, BASE CURRENT (mA)
Figure 8. Collector Saturation Region
50 100
2.2
TJ = 25°C
1.8
1.4 VBE(sat) @ IC/IB = 250
1.0
VCE(sat) @ IC/IB = 250
0.6
VBE @ VCE = 3.0 V
2.2
TJ = 25°C
1.8
1.4 VBE(sat) @ IC/IB = 250
1.0
VCE(sat) @ IC/IB = 250
0.6
VBE @ VCE = 3.0 V
0.2
0.04 0.06
0.1 0.2 0.4 0.6 1.0
IC, COLLECTOR CURRENT (AMP)
2.0 4.0
0.2
0.04 0.06
Figure 9. “On” Voltages
0.1 0.2 0.4 0.6 1.0
IC, COLLECTOR CURRENT (AMP)
2.0
4.0
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부품번호 | 상세설명 및 기능 | 제조사 |
MJE700 | 4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT | Motorola Semiconductors |
MJE700 | DARLINGTON POWER TRANSISTORS COMPLEMENTARY | ON |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |