PDF BUX48A Data sheet ( Hoja de datos )

Número de pieza	BUX48A
Descripción	High Power NPN Silicon Transistors
Fabricantes	nELL
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No Preview Available ! SEMICONDUCTOR BUX48 / BUX48A RRooHHSS Nell High Power Products High Power NPN Silicon Transistors (15A, 400V and 450V, 175W) FEATURES Designed for general-purpose switching applications. Collector-Emitter saturation voltage VCE(sat) = 1.5 Vdc (Max) @ lC = 8 Adc High voltage capability, high current capability DESCRIPTION The BUX48 is a silicon epitaxial-base mesa NPN transistor mounted in JEDEC TO-3 metal case. lt is intended for power switching circuits and industrial applications from single and three- phase mains. 26.00 Max. 10.90 13.10 Max. 8.60 1.60 12 2-Φ4.0 Thru. APPLICATIONS Switch mode power supplies Flyback and forward single transistor low power converters Inverters Solenoid and Relay drivers Motor controls Deflection circuits All dimensions in millimeters 1 2 TO-3 TAB INTERNAL SCHEMATIC DIAGRAM (1) B C (TAB) (2) E ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) SYMBOL PARAMETER VCES VCER VCEO VEBO IC ICM ICP IB IBM PD Tj Tstg TL Collector to emitter voltage (VBE = 0) Collector to emitter voltage (RBE = 10Ω) Collector to emitter voltage (IB = 0) Emitter to base voltage (IC = 0) Collector current Collector peak current Collector peak current, non repetitive (tp < 20µs) Base current Base peak current Total power dissipation Derate above 25°C TC= 25°C TC= 100°C Junction temperature Storage temperature Maximum lead temperature for soldering purposes : 1/8" from case for 5 seconds VALUE BUX48 BUX48A 850 1000 850 1000 400 450 7 15 30 55 4 20 175 100 1.0 200 -65 to 200 275 UNIT V A W W/ºC ºC www.nellsemi.com Page 1 of 8 1 page SEMICONDUCTOR BUX48 / BUX48A RRooHHSS Nell High Power Products Table.1 Test Conditions for Dynamic Performance VCEO(SUS) RBSOA AND INDUCTIVE SWITCHING +10V 0 20 1 2 PW Varied to Attain lC = 200 mA PULSES d= 3% 220 680 pF 100 100 33 D1 2W 160 22 µF 2N6438 D3 MM3735 680 pF 22 D1 D2 D3 D4 680 pF 2N3763 160 33 2W D3 1N4934 22 D4 0.1µF 0.22µF 2N6339 +10V MR854 MR854 VCC RESISTIVE SWITCHING TURN-ON TIME 1 2 lB1 lB1 adjusted to obtain the forced hFE desired TURN-OFF TIME Use inductive switching driver as the input to the resistive test circuit. Lcoil = 25 mH, Vcc = 10V Rcoil = 0.7Ω Lcoil = 180 µH Rcoil = 0.05Ω Vcc = 20V Vclamp = 300 V RB ADJUSTED TO ATTAIN DESIRED lB1 INDUCTIVE TEST CIRCUIT DUT 1 INPUT SEE ABOVE FOR DETAILED CONDITIONS 1N4937 OR EQUIVALENT Vclamp 2 RS= 0.1Ω Rcoil Lcoil VCC OUTPUT WAVEFORMS lC VCE lC(pk) t1 tf VCE or Vlamp TIME t2 t1 Adjusted to obtain lC tf Clamped t t Lcoil (lCpk) t1 = VCC Lcoil (lCpk) t2 = VClamp Test Equipment Scope-Tektronix 475 or Equivalent VCC = 300 V RL = 83Ω Pulse Width = 10 μs RESISTIVE TEST CIRCUIT DUT 1 2 RL VCC Fig.7 Inductive switching measurements lC (pk) VCE(pk) 90% VCE(pk) 90% lC(pk) lC ts tr tf tt tc VCE lB 90% lB1 10% VCE(pk) 10% lC(pk) 2% lC Time Fig.8. Peak-Reverse current 10 βf = 5 lC = 10A 8 6 4 2 0 0 123456 Base-Emitter voltage, VBE(off) (V) www.nellsemi.com Page 5 of 8 5 Page

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