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PDF BD912 Data sheet ( Hoja de datos )
| Número de pieza | BD912 | |
| Descripción | Complementary Silicon Power Ttransistors | |
| Fabricantes | ARK | |
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Complementary Silicon Power Ttransistors
Product specification
BD911 / BD912
DESCRIPTION
The BD911 are silicon Epitaxial-Base NPN power transistors
mounted in Jedec TO-220plastic package.
They are intented for use in power linear and switching applications.
The complementary PNP types are BD912 respectively.
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC)
Parameter
l Value Unit
Collector-Base Voltage
VCBO 100 V
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Dissipation at
Max. Operating Junction Temperature
Storage Temperature
VCEO
VEBO
IC
IB
Ptot
Tj
Tstg
100 V
5V
15 A
5.0 A
90 W
150 oC
-55~150 oC
A1 A2 G
TO-220
ELECTRICAL CHARACTERISTICS ( Ta = 25 OC)
Parameter
Symbol Test Conditions
Collector Cut-off Current
Collector Cut-off Current
ICBO
ICEO
VCB=100V, IE=0
VCE=50V, IE=0
Emitter Cut-off Current
IEBO VEB=5V, IC=0
Collector-Emitter Sustaining Voltage VCEO IC=100mA, IB=0
DC Current Gain
VCE=4V, IC=0.5A
hFE VCE=4V, IC=5.0A
VCE=4V, IC=10A
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
VCE(sat)
VBE(sat)
IC=5.0A,IB=500mA
IC=10A,IB=2.5A
IC=10A,IB=2.5A
Transition frequency
fT VCE=4.0V,IC=500mA
Min.
—
—
—
100
40
15
5
—
—
—
3
Typ.
—
—
—
—
—
—
—
—
—
—
—
Max. Unit
0.5 mA
1.0 mA
1.0 mA
—V
250
150
—
1.0 V
3.0
2.5 V
— MHz
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet BD912.PDF ] | |
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