(PDF) BU407 Datasheet - NPN SILCON EPITAXIAL-BASE POWER TRANSISTORS

Número de pieza	BU407
Descripción	NPN SILCON EPITAXIAL-BASE POWER TRANSISTORS
Fabricantes	Comset Semiconductor
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No Preview Available ! BU406 – BU407 NPN SILCON EPITAXIAL-BASE POWER TRANSISTORS They are NPN transistors mounted in Jedec TO-220 plastic package. They are intended for use in horizontal deflection output stages of large screens MTV receivers with 110o CRT and horizontal deflection for monochrome TV. They are very high switching speed. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO VCBO VCEX VEBO IC ICM IB PD TJ TStg Collector-Emitter Voltage (IB=0) Collector-Base Voltage (IE=0) Collector-Emitter Voltage (VBE= -2V) Emitter-Base Voltage (IC=0) Collector Current Peak Collector Current (10 ms) Base Current Total Device Dissipation (TC = 25°C) Junction Temperature Storage Temperature range THERMAL CHARACTERISTICS Value BU406 BU407 BU406 BU407 BU406 BU407 200 150 400 330 400 330 6 7 15 4 60 150 -65 to +150 Unit V V V V A A A W °C °C Symbol Ratings RthJ-a RthJ-mb Thermal Resistance, Junction to mounting base Thermal Resistance, Junction to ambient in free air Value 70 2.08 Unit °C/W °C/W COMSET SEMICONDUCTORS 1/3 1 page

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PDF BU407 Data sheet ( Hoja de datos )