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PDF MJE13009 Data sheet ( Hoja de datos )
| Número de pieza | MJE13009 | |
| Descripción | SILICON NPN TRANSISTORS DESCRIPTION | |
| Fabricantes | Central Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MJE13009 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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MJE13008
MJE13009
SILICON NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR MJE13008 and
MJE13009 are silicon NPN transistors designed for high
voltage, high speed switching applications.
MARKING: FULL PART NUMBER
TO-220 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCEO
VCEV
VEBO
IC
ICM
IB
PD
TJ, Tstg
ΘJC
MJE13008 MJE13009
300 400
600 700
9.0
12
24
6.0
100
-65 to +150
1.25
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICEV
VCE=Rated VCEV, VBE(OFF)=1.5V
ICEV
VCE=Rated VCEV, VBE(OFF)=1.5V, TC=100°C
IEBO
VEB=9.0V
BVCEO
IC=10mA (MJE13008)
300
BVCEO
IC=10mA (MJE13009)
400
VCE(SAT) IC=5.0A, IB=1.0A
VCE(SAT) IC=8.0A, IB=1.6A
VCE(SAT) IC=12A, IB=3.0A
VBE(SAT) IC=5.0A, IB=1.0A
VBE(SAT) IC=8.0A, IB=1.6A
hFE VCE=5.0V, IC=5.0A
8.0
hFE VCE=5.0V, IC=8.0A
6.0
fT VCE=10V, IC=500mA, f=1.0MHz
4.0
Cob VCB=10V, IE=0, f=100kHz
td
tr VCC=125V, IC=8.0A, IB1=IB2=1.6A
ts tp=25μs, Duty Cycle < 1.0%
tf
TYP
180
MAX
1.0
5.0
1.0
1.0
1.5
3.0
1.2
1.6
40
30
0.1
1.0
3.0
0.7
UNITS
V
V
V
A
A
A
W
°C
°C/W
UNITS
mA
mA
mA
V
V
V
V
V
V
V
MHz
pF
μs
μs
μs
μs
R1 (12-February 2015)
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet MJE13009.PDF ] | |
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