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MJE13009 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 MJE13009
기능 NPN Silicon Transisor
제조업체 Fairchild Semiconductor
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MJE13009 데이터시트, 핀배열, 회로
MJE13008/13009
High Voltage Switch Mode Application
• High Speed Switching
• Suitable for Switching Regulator and Motor Control
1 TO-220
1.Base 2.Collector 3.Emitter
NPN Silicon Transisor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
: MJE13008
: MJE13009
VCEO
Collector-Emitter Voltage
: MJE13008
: MJE13009
VEBO
IC
ICP
IB
PC
TJ
TSTG
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Value
600
700
300
400
9
12
24
6
100
150
- 65 ~ 150
Units
V
V
V
V
V
A
A
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
VCEO(sus)
Collector-Emitter Sustaining Voltage
: MJE13008
: MJE13009
IC = 10mA, IB = 0
IEBO
hFE
VCE(sat)
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
VBE (sat)
* Base-Emitter Saturation Voltage
Cob Output Capacitance
fT Current Gain Bandwidth Product
tON Turn ON Time
tSTG
Storage Time
tF Fall Time
* Pulse test: PW300µs, Duty cycle2%
VEB = 9V, IC = 0
VCE = 5V, IC = 5A
VCE = 5V, IC = 8A
IC = 5A, IB = 1A
IC = 8A, IB = 1.6A
IC = 12A, IB = 3A
IC = 5A, IB = 1A
IC = 8A, IB = 1.6A
VCB = 10V, f = 0.1MHz
VCE = 10V, IC = 0.5A
VCC = 125V, IC = 8A
IB1 = - IB2 = 1.6A
RL = 15,6
Min. Typ. Max. Units
300 V
400 V
1 mA
8 40
6 30
1V
1.5 V
3V
1.2 V
1.6 V
180 pF
4 MHz
1.1 µs
3 µs
0.7 µs
©2001 Fairchild Semiconductor Corporation
Rev. A1, February 2001




MJE13009 pdf, 반도체, 판매, 대치품
Package Demensions
TO-220
9.90 ±0.20
(8.70)
ø3.60 ±0.10
4.50 ±0.20
1.30
+0.10
–0.05
1.27 ±0.10
2.54TYP
[2.54 ±0.20]
1.52 ±0.10
0.80 ±0.10
2.54TYP
[2.54 ±0.20]
0.50
+0.10
–0.05
2.40 ±0.20
10.00 ±0.20
©2001 Fairchild Semiconductor Corporation
Dimensions in Millimeters
Rev. A1, February 2001

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