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부품번호 | MTB013N10RH8 기능 |
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기능 | N-Channel Enhancement Mode Power MOSFET | ||
제조업체 | CYStech Electronics | ||
로고 | |||
CYStech Electronics Corp.
Spec. No. : C056H8
Issued Date : 2016.08.29
Revised Date :
Page No. : 1/10
N-Channel Enhancement Mode Power MOSFET
MTB013N10RH8 BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
Features
RDSON(TYP)
VGS=10V, ID=15A
VGS=4.5V, ID=10A
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Repetitive Avalanche Rated
• Pb-free lead plating and Halogen-free package
100V
42A
14.3A
9.8mΩ
11.1mΩ
Symbol
MTB013N10RH8
G:Gate D:Drain S:Source
Outline
Pin 1
S
S
S
G
DFN5×6
D
D
D
D
G
S
S
S
D
D
D
D
Pin 1
Ordering Information
Device
MTB013N10RH8-0-T6-G
Package
DFN 5 ×6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB013N10RH8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C056H8
Issued Date : 2016.08.29
Revised Date :
Page No. : 4/10
Typical Characteristics
Typical Output Characteristics
50
10V, 9V, 8V,7V,6V
5
40
4V
30 3.5V
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
20
10
0
0
3V
VGS=2.5V
2468
VDS, Drain-Source Voltage(V)
10
0.8
0.6 ID=250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
100
VGS=4.5V
10
VGS=10V
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=0V
1
0.8
Tj=25°C
0.6
Tj=150°C
0.4
1
0.1
1 10
ID, Drain Current(A)
100
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
100
90 ID=15A
80
70
60
50
40
30
20
10
0
0 2 4 6 8 10
VGS, Gate-Source Voltage(V)
0.2
0 2 4 6 8 10 12 14 16 18 20
IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
2.4
2 VGS=10V, ID=15A
1.6
1.2
0.8
0.4 RDS(ON)@Tj=25°C : 9.8mΩ typ.
0
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTB013N10RH8
CYStek Product Specification
4페이지 CYStech Electronics Corp.
Recommended Soldering Footprint & Stencil Design
Spec. No. : C056H8
Issued Date : 2016.08.29
Revised Date :
Page No. : 7/10
MTB013N10RH8
unit : mm
CYStek Product Specification
7페이지 | |||
구 성 | 총 10 페이지수 | ||
다운로드 | [ MTB013N10RH8.PDF 데이터시트 ] |
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부품번호 | 상세설명 및 기능 | 제조사 |
MTB013N10RH8 | N-Channel Enhancement Mode Power MOSFET | CYStech Electronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |