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Número de pieza | MTB015N10RI3 | |
Descripción | N-Channel Enhancement Mode Power MOSFET | |
Fabricantes | CYStech Electronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MTB015N10RI3 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! CYStech Electronics Corp.
Spec. No. : C053I3
Issued Date : 2016.10.13
Revised Date :
Page No. : 1/8
N-Channel Enhancement Mode Power MOSFET
MTB015N10RI3 BVDSS
ID@ VGS=10V, TC=25°C
100V
46A
RDS(ON)@VGS=10V, ID=20A 13.5mΩ(typ)
RDS(ON)@VGS=4.5V, ID=20A 16.0mΩ(typ)
Features
• Simple Drive Requirement
• Repetitive Avalanche Rated
• Fast Switching Characteristic
• RoHS compliant package & Halogen-free package
Symbol
MTB015N10RI3
Outline
TO-251S
G:Gate
D:Drain
S:Source
GDS
Ordering Information
Device
MTB015N10RI3-0-UA-G
Package
TO-251S
(RoHS compliant and halogen-free package)
Shipping
80 pcs/tube, 50 tubes/box
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UA : 80 pcs / tube, 50 tubes/box
Product rank, zero for no rank products
Product name
MTB015N10RI3
CYStek Product Specification
1 page CYStech Electronics Corp.
Spec. No. : C053I3
Issued Date : 2016.10.13
Revised Date :
Page No. : 5/8
Typical Characteristics(Cont.)
Forward Transfer Admittance vs Drain Current
100
10
1
VDS=10V
0.1 Pulsed
Ta=25°C
0.01
0.001
0.01 0.1
1
10
ID, Drain Current(A)
100
NormalizedThreshold Voltage vs Junction Tempearture
1.4
1.2 ID=1mA
1
0.8
0.6
ID=250μA
0.4
0.2
0
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
1000
100
Maximum Safe Operating Area
RDS(ON)
Limited
100μs
1ms
10 10ms
100ms
1
TC=25°C, Tj=150°, VGS=10V
RθJC=2°C/W, Single Pulse
1s
DC
0.1
0.1
1 10 100
VDS, Drain-Source Voltage(V)
1000
Single Pulse Maximum Power Dissipation
3000
2500
TJ(MAX)=150°C
TC=25°C
2000 RθJC=2°C/W
1500
1000
500
0
0.001
0.01
0.1 1 10
Pulse Width(s)
100 1000
Gate Charge Characteristics
10
8 VDS=50V
6 VDS=20V
4
VDS=80V
2
ID=20A
0
0 10 20 30 40 50 60
Total Gate Charge---Qg(nC)
Maximum Drain Current vs Case Temperature
50
45
40
35
30
25
20
15
10
5
0
25
VGS=10V, RθJC=2°C/W
50 75 100 125
TC, Case Temperature(°C)
150
175
MTB015N10RI3
CYStek Product Specification
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet MTB015N10RI3.PDF ] |
Número de pieza | Descripción | Fabricantes |
MTB015N10RI3 | N-Channel Enhancement Mode Power MOSFET | CYStech Electronics |
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