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PDF MTB04N03E3 Data sheet ( Hoja de datos )
| Número de pieza | MTB04N03E3 | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | CYStech Electronics | |
| Logotipo |  |
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CYStech Electronics Corp.
Spec. No. : C889E3
Issued Date : 2013.02.20
Revised Date : 2013.02.26
Page No. : 1/7
N-Channel Enhancement Mode Power MOSFET
MTB04N03E3
BVDSS
ID
Features
• Simple Drive Requirement
• Repetitive Avalanche Rated
• Fast Switching Characteristic
• Pb-free lead plating and RoHS compliant package
RDSON(TYP)
VGS=10V, ID=30A
VGS=4.5V, ID=24A
30V
115A
3.8mΩ
6.1mΩ
Symbol
MTB04N03E3
Outline
TO-220
G：Gate
D：Drain
S：Source
GDS
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=10V, TC=25°C
Continuous Drain Current @VGS=10V, TC=100°C
Pulsed Drain Current
Avalanche Current
Avalanche Energy
L=2mH, ID=26A, VDD=25V
Repetitive Avalanche Energy L=0.05mH
Total Power Dissipation
TC=25°C
TC=100°C
Operating Junction and Storage Temperature
Note : *1. Pulse width limited by maximum junction temperature.
Symbol
VDS
VGS
ID
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
MTB04N03E3
Limits
30
±20
115
81
460 *1
26
576
25
107
53
-55~+175
Unit
V
A
mJ
W
°C
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C889E3
Issued Date : 2013.02.20
Revised Date : 2013.02.26
Page No. : 5/7
Typical Characteristics(Cont.)
Typical Transfer Characteristics
120
VDS=10V
100
80
60
40
20
0
0 12 34
VGS, Gate-Source Voltage(V)
Single Pulse Maximum Power Dissipation
1000
900
800 TJ(MAX)=175°C
700
TC=25°C
θJA=1.4°C/W
600
500
400
300
200
100
0
5
0.0001 0.001 0.01
0.1
1
10
Pulse Width(s)
1
D=0.5
Transient Thermal Response Curves
0.2
0.1 0.1
0.05
0.02
0.01
0.01
1.E-05
1.RθJC(t)=r(t)*RθJC
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*RθJC(t)
4.RθJC=1.4 °C/W
Single Pulse
1.E-04
1.E-03
1.E-02
1.E-01
t1, Square Wave Pulse Duration(s)
1.E+00
1.E+01
MTB04N03E3
CYStek Product Specification
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet MTB04N03E3.PDF ] | |
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