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Número de pieza | MTB04N03Q8 | |
Descripción | N-Channel Enhancement Mode Power MOSFET | |
Fabricantes | CYStech Electronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MTB04N03Q8 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! CYStech Electronics Corp.
Spec. No. : C789Q8
Issued Date : 2011.12.16
Revised Date :
Page No. : 1/9
N-Channel Logic Level Enhancement Mode Power MOSFET
MTB04N03Q8
BVDSS
ID
RDSON@VGS=10V, ID=18A
RDSON@VGS=4.5V, ID=12A
30V
25A
3.5mΩ(typ)
4.8mΩ(typ)
Description
The MTB04N03Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications
and suited for low voltage applications such as DC/DC converters.
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Dynamic dv/dt rating
• Repetitive Avalanche Rated
• Pb-free lead plating package
Symbol
MTB04N03Q8
Outline
Pin 1
SOP-8
G:Gate
D:Drain
S:Source
MTB04N03Q8
CYStek Product Specification
1 page CYStech Electronics Corp.
Spec. No. : C789Q8
Issued Date : 2011.12.16
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Ciss
Threshold Voltage vs Junction Tempearture
2
1.8 ID=250μA
1000
C oss
Crss
1.6
1.4
1.2
1
100
0.1
1 10
VDS, Drain-Source Voltage(V)
100
Forward Transfer Admittance vs Drain Current
100
10
1
VDS=10V
0.1 Pulsed
Ta=25°C
0.01
0.001
0.01 0.1
1
10
ID, Drain Current(A)
100
0.8
-60
-20 20
60 100
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=15V
8 ID=18A
140
6
4
2
0
0 10 20 30 40 50 60
Qg, Total Gate Charge(nC)
Maximum Safe Operating Area
1000
100 RDS(ON) Limit
10
1
TA=25°C, Tj=150°C
0.1 Single Pulse
10μs
100μs
1ms
10ms
100m
DC
Maximum Drain Current vs Case Temperature
30
25
20
15
10
5
0.01
0.01
0.1 1
10
VDS, Drain-Source Voltage(V)
100
0
25 50 75 100 125 150 175
TC, Case Temperature(°C)
MTB04N03Q8
CYStek Product Specification
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet MTB04N03Q8.PDF ] |
Número de pieza | Descripción | Fabricantes |
MTB04N03Q8 | N-Channel Enhancement Mode Power MOSFET | CYStech Electronics |
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