DataSheet.es    


PDF MTB090N06N3 Data sheet ( Hoja de datos )

Número de pieza MTB090N06N3
Descripción N-Channel Enhancement Mode Power MOSFET
Fabricantes CYStech Electronics 
Logotipo CYStech Electronics Logotipo



Hay una vista previa y un enlace de descarga de MTB090N06N3 (archivo pdf) en la parte inferior de esta página.


Total 9 Páginas

No Preview Available ! MTB090N06N3 Hoja de datos, Descripción, Manual

CYStech Electronics Corp.
Spec. No. : C420N3
Issued Date : 2014.01.24
Revised Date :
Page No. : 1/9
60V N-CHANNEL Enhancement Mode MOSFET
MTB090N06N3
BVDSS
ID
RDSON@VGS=10V, ID=3A
RDSON@VGS=4.5V, ID=2A
60V
3.9A
77mΩ(typ)
86mΩ(typ)
Features
Simple drive requirement
Small package outline
Pb-free lead plating and halogen-free package
Symbol
MTB090N06N3
Outline
SOT-23
D
GGate
SSource
DDrain
S
G
Ordering Information
Device
MTB090N06N3-0-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTB090N06N3
CYStek Product Specification

1 page




MTB090N06N3 pdf
CYStech Electronics Corp.
Spec. No. : C420N3
Issued Date : 2014.01.24
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
1000
Ciss
100
C oss
10
0.1
Crss
1 10
VDS, Drain-Source Voltage(V)
100
Threshold Voltage vs Junction Tempearture
1.6
1.4
1.2 ID=1mA
1
0.8
0.6
0.4 ID=250μA
0.2
0
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
10
1
Gate Charge Characteristics
10
VDS=48V
8
VDS=30V
6
4
0.1 VDS=15V
Pulsed
Ta=25°C
2
ID=3.9A
0.01 0
0.001
0.01
0.1
1
10
02 468
ID, Drain Current(A)
Qg, Total Gate Charge(nC)
Maximum Safe Operating Area
100
RDS(ON)
10 Limit
100μs
1 1ms
10ms
0.1
TA=25°C, Tj=150°, VGS=10V
RθJA=100°C/W, Single Pulse
100ms
DC
0.01
0.01 0.1 1 10 100
VDS, Drain-Source Voltage(V)
1000
Maximum Drain Current vs Junction Temperature
4.5
4
3.5
3
2.5
2
1.5
1
0.5 TA=25°C, VGS=10V, RθJA=100°C/W
0
25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTB090N06N3
CYStek Product Specification

5 Page










PáginasTotal 9 Páginas
PDF Descargar[ Datasheet MTB090N06N3.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
MTB090N06N3N-Channel Enhancement Mode Power MOSFETCYStech Electronics
CYStech Electronics

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar