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PDF C2M0045170D Data sheet ( Hoja de datos )
| Número de pieza | C2M0045170D | |
| Descripción | Silicon Carbide Power MOSFET | |
| Fabricantes | Cree | |
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VDS 1700 V
C2M0045170D
Silicon Carbide Power MOSFET
TM
C2M MOSFET Technology
ID @ 25˚C
72 A
RDS(on) 45 mΩ
N-Channel Enhancement Mode
Features
Package
• High Blocking Voltage with Low On-Resistance
• High Speed Switching with Low Capacitances
• Easy to Parallel and Simple to Drive
• Resistant to Latch-Up
• Halogen Free, RoHS Compliant
Benefits
• Higher System Efficiency
• Reduced Cooling Requirements
• Increased Power Density
• Increased System Switching Frequency
TO-247-3
Applications
• Solar Inverters
• Switch Mode Power Supplies
• High Voltage DC/DC converters
• Motor Drive
• Pulsed Power Applications
Part Number
C2M0045170D
Package
TO-247-3
Marking
C2M0045170
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value
Unit
Test Conditions
Note
VDSmax
VGSmax
VGSop
Drain - Source Voltage
Gate - Source Voltage
Gate - Source Voltage
ID Continuous Drain Current
ID(pulse) Pulsed Drain Current
PD Power Dissipation
TJ , Tstg Operating Junction and Storage Temperature
1700
-10/+25
-5/+20
72
48
160
520
-40 to
+150
V VGS = 0 V, ID = 100 μA
V Absolute maximum values, AC (f >1 Hz)
V Recommended operational values
A VGS =20 V, TC = 25˚C
VGS =20 V, TC = 100˚C
Fig. 19
A Pulse width tP limited by Tjmax
Fig. 22
W TC=25˚C, TJ = 150 ˚C
Fig. 20
˚C
TL Solder Temperature
Md Mounting Torque
260 ˚C 1.6mm (0.063”) from case for 10s
1
8.8
Nm
lbf-in
M3 or 6-32 screw
1 C2M0045170D Rev. -, 06-2016
1 page  
Typical Performance
-6 -5 -4 -3 -2 -1 0
0
VGS = 0 V
VGS = 5 V
-30
VGS = 10 V
VGS = 15 V
VGS = 20 V
-60
-90
Drain-Source Voltage VDS (V)
Conditions:
TJ = -40 °C
tp < 200 µs
Figure 13. 3rd Quadrant Characteristic at -40 ºC
-120
-150
-6 -5 -4 -3 -2 -1 0
0
VGS = 0 V
VGS = 5 V
VGS = 10 V
VGS = 15 V
VGS = 20 V
-30
-60
-90
Drain-Source Voltage VDS (V)
Conditions:
TJ = 150 °C
tp < 200 µs
-120
-150
Figure 15. 3rd Quadrant Characteristic at 150 ºC
10000
1000
Conditions:
TJ = 25 °C
Ciss
VAC = 25 mV
f = 1 MHz
Coss
100
Crss
10
-6 -5 -4 -3 -2 -1 0
0
VGS = 0 V
VGS = 5 V
-30
VGS = 10 V
VGS = 15 V
VGS = 20 V
-60
-90
Drain-Source Voltage VDS (V)
Conditions:
TJ = 25 °C
tp < 200 µs
Figure 14. 3rd Quadrant Characteristic at 25 ºC
-120
-150
120
100
80
60
40
20
0
0
200
400
600
800
1000
1200
Drain to Source Voltage, VDS (V)
Figure 16. Output Capacitor Stored Energy
10000
1000
Conditions:
TJ = 25 °C
Ciss
VAC = 25 mV
f = 1 MHz
100 Coss
10 Crss
1
0 50 100 150
Drain-Source Voltage, VDS (V)
Figure 17. Capacitances vs. Drain-Source
Voltage (0-200 V)
200
1
0 200 400 600 800
Drain-Source Voltage, VDS (V)
Figure 18. Capacitances vs. Drain-Source
Voltage (0-1000 V)
1000
5 C2M0045170D Rev. -, 06-2016
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet C2M0045170D.PDF ] | |
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