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부품번호 | C3M0065090J 기능 |
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기능 | Silicon Carbide Power MOSFET | ||
제조업체 | Cree | ||
로고 | |||
전체 10 페이지수
VDS 900 V
C3M0065090J
ID @ 25˚C
35 A
Silicon Carbide Power MOSFET
TM
C3M MOSFET Technology
RDS(on) 65 mΩ
N-Channel Enhancement Mode
Features
Package
• New C3M SiC MOSFET technology
• New low impedance package with driver source pin
• 7mm of creepage distance between drain and source
• High blocking voltage with low On-resistance
• Fast intrinsic diode with low reverse recovery (Qrr)
• Low output capacitance (60pF)
• Halogen free, RoHS compliant
Benefits
• Reduce switching losses and minimize gate ringing
• Higher system efficiency
• Increase power density
• Increase system switching frequency
Applications
• Renewable energy
• EV battery chargers
• High voltage DC/DC converters
• Switch Mode Power Supplies
TAB
Drain
1 2 34 5 6 7
G DS S S S S S
Drain
(TAB)
Gate
(Pin 1)
Driver
Source
(Pin 2)
Power
Source
(Pin 3,4,5,6,7)
Part Number
Package
Marking
C3M0065090J
7L D2PAK
C3M0065090J
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value
VDSmax
VGSmax
VGSop
Drain - Source Voltage
Gate - Source Voltage (dynamic)
Gate - Source Voltage (static)
ID Continuous Drain Current
900
-8/+19
-4/+15
35
22
ID(pulse) Pulsed Drain Current
90
EAS Avalanche energy, Single pulse
PD Power Dissipation
TJ , Tstg Operating Junction and Storage Temperature
TL Solder Temperature
Note (1): When using MOSFET Body Diode VGSmax = -4V/+19V
Note (2): MOSFET can also safely operate at 0/+15 V
110
113
-55 to
+150
260
Unit Test Conditions
V VGS = 0 V, ID = 100 μA
V AC (f >1 Hz)
V Static
VGS = 15 V, TC = 25˚C
A
VGS = 15 V, TC = 100˚C
A Pulse width tP limited by Tjmax
mJ ID = 22A, VDD = 50V
W TC=25˚C, TJ = 150 ˚C
˚C
˚C 1.6mm (0.063”) from case for 10s
Note
Note. 1
Note. 2
Fig. 19
Fig. 22
Fig. 20
1 C3M0065090J Rev. B, 10-2016
Typical Performance
50
Conditions:
VDS = 20 V
tp < 200 µs
40
30
20
10
TJ = 150 °C
TJ = 25 °C
TJ = -55 °C
0
0
-9 -8
246
Gate-Source Voltage, VGS (V)
8
Figure 7. Transfer Characteristic for
Various Junction Temperatures
-7 -6 -5 -4 -3 -2 -1
10
0
0
VGS = -4 V
-10
VGS = 0 V
VGS = -2 V
-20
-30
-40
-50
Drain-Source Voltage VDS (V)
Conditions:
TJ = 25°C
tp < 200 µs
-60
-70
-80
Figure 9. Body Diode Characteristic at 25 ºC
3.0
Conditons
VGS = VDS
2.5 IDS = 5 mA
2.0
1.5
1.0
0.5
0.0
-50
-25
0 25 50 75 100 125 150
Junction Temperature TJ (°C)
Figure 11. Threshold Voltage vs. Temperature
-9 -8 -7 -6 -5 -4 -3 -2 -1 0
0
VGS = -4 V
-10
VGS = 0 V
VGS = -2 V
-20
-30
-40
-50
Drain-Source Voltage VDS (V)
Conditions:
TJ = -55°C
tp < 200 µs
-60
-70
-80
Figure 8. Body Diode Characteristic at -55 ºC
-10 -9
-8
-7
-6
-5
-4
-3
-2 -1
0
0
VGS = -4 V
VGS = 0 V
-10
-20
-30
VGS = -2 V
-40
-50
Drain-Source Voltage VDS (V)
Conditions:
TJ = 150°C
tp < 200 µs
-60
-70
-80
Figure 10. Body Diode Characteristic at 150 ºC
16
Conditions:
IDS = 20 A
12
IGS = 100 mA
VDS = 400 V
TJ = 25 °C
8
4
0
-4
0
5 10 15 20 25 30 35
Gate Charge, QG (nC)
Figure 12. Gate Charge Characteristics
4 C3M0065090J Rev. B, 10-2016
4페이지 Typical Performance
250
Conditions:
TJ = 25 °C
VDD = 400 V
200 IDS = 20 A
VGS = -4V/+15 V
FWD = C3M0065090J
L = 77 μH
150
100
50
ETotal
EOn
EOff
0
0 5 10 15 20 25
External Gate Resistor RG(ext) (Ohms)
Figure 25. Clamped Inductive Switching Energy vs. RG(ext)
40
Conditions:
35
TJ = 25 °C
VDD = 400 V
IDS = 20 A
30
VGS = -4V/+15 V
FWD = C3M0065090J
L = 77 μH
25
20
15
10
td(off)
tr
td(on)
tf
5
0
0 5 10 15 20
External Gate Resistor RG(ext) (Ohms)
25
35
30
25
20
15
10
5
0
0
Figure 27. Switching Times vs. RG(ext)
Conditons:
VDD = 50 V
20 40 60 80
Time in Avalanche TAV (us)
100
Figure 29. Single Avalanche SOA curve
100
Conditions:
IDS = 20 A
VDD = 400 V
80
RG(ext) = 2.5 Ω
VGS = -4V/+15 V
FWD = C3M0065090J
L = 77 μH
60 ETotal
EOn
40
20 EOff
0
0 25 50 75 100 125 150
Junction Temperature, TJ (°C)
Figure 26. Clamped Inductive Switching Energy vs.
Temperature
175
Figure 28. Switching Times Definition
7 C3M0065090J Rev. B, 10-2016
7페이지 | |||
구 성 | 총 10 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |