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부품번호 | C3M0120090J 기능 |
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기능 | Silicon Carbide Power MOSFET | ||
제조업체 | Cree | ||
로고 | |||
전체 10 페이지수
VDS 900 V
C3M0120090J
ID @ 25˚C
22 A
Silicon Carbide Power MOSFET
TM
C3M MOSFET Technology
RDS(on) 120 mΩ
N-Channel Enhancement Mode
Features
Package
• New C3M SiC MOSFET technology
• High blocking voltage with low On-resistance
• High speed switching with low capacitances
• New low impedance package with driver source
• Fast intrinsic diode with low reverse recovery (Qrr)
• Halogen free, RoHS compliant
TAB
Drain
Benefits
• Higher system efficiency
• Reduced cooling requirements
• Increased power density
• Increased system switching frequency
1 2 34 5 6 7
G KS S S S S S
Drain
(TAB)
Applications
• Renewable energy
• EV battery chargers
• High voltage DC/DC converters
• Switch Mode Power Supplies
• Lighting
Gate
(Pin 1)
Driver
Source
(Pin 2)
Power
Source
(Pin 3,4,5,6,7)
Part Number
Package
C3M0120090J
7L D2PAK
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value
VDSmax
VGSmax
VGSop
Drain - Source Voltage
Gate - Source Voltage
Gate - Source Voltage
ID Continuous Drain Current
900
-8/+18
-4/+15
22
14
ID(pulse) Pulsed Drain Current
50
PD Power Dissipation
TJ , Tstg Operating Junction and Storage Temperature
TL Solder Temperature
Note (1): MOSFET can also safely operate at 0/+15 V
83
-55 to
+150
260
Unit Test Conditions
V VGS = 0 V, ID = 100 μA
V Absolute maximum values
V Recommended operational values
A VGS = 15 V, TC = 25˚C
VGS = 15 V, TC = 100˚C
A Pulse width tP limited by Tjmax
W TC=25˚C, TJ = 150 ˚C
˚C
˚C 1.6mm (0.063”) from case for 10s
Note
Note (1)
Fig. 19
Fig. 22
Fig. 20
1 C3M0120090J Rev. - , 12-2015
Typical Performance
35
Conditions:
30
VDS = 20 V
tp < 200 µs
25
20
15
TJ = 150 °C
TJ = 25 °C
TJ = -55 °C
10
5
0
0 2 4 6 8 10 12 14
Gate-Source Voltage, VGS (V)
Figure 7. Transfer Characteristic for
Various Junction Temperatures
-8 -7 -6 -5 -4 -3 -2 -1 0
0
VGS = -4 V
VGS = 0 V
VGS = -2 V
-5
-10
-15
-20
-25
-30
Drain-Source Voltage VDS (V)
Conditions:
TJ = 25°C
tp < 200 µs
-35
-40
-45
Figure 9. Body Diode Characteristic at 25 ºC
3.0
Conditons
VGS = VDS
2.5 IDS = 3 mA
2.0
1.5
1.0
0.5
0.0
-50
-25
0 25 50 75 100 125 150
Junction Temperature TJ (°C)
Figure 11. Threshold Voltage vs. Temperature
-8 -7 -6 -5 -4 -3 -2 -1 0
0
VGS = -4 V
VGS = 0 V
-5
-10
-15
VGS = -2 V
-20
-25
-30
Drain-Source Voltage VDS (V)
Conditions:
TJ = -55°C
tp < 200 µs
-35
-40
-45
Figure 8. Body Diode Characteristic at -55 ºC
-8 -7 -6 -5 -4 -3 -2 -1 0
0
VGS = -4 V
VGS = 0 V
-5
-10
-15
VGS = -2 V
-20
-25
-30
Drain-Source Voltage VDS (V)
Conditions:
TJ = 150°C
tp < 200 µs
-35
-40
-45
Figure 10. Body Diode Characteristic at 150 ºC
16
Conditions:
IDS = 15 A
12
IGS = 10 mA
VDS = 400 V
TJ = 25 °C
8
4
0
-4
0 4 8 12 16
Gate Charge, QG (nC)
Figure 12. Gate Charge Characteristics
20
4 C3M0120090J Rev. - , 12-2015
4페이지 Typical Performance
150
Conditions:
TJ = 25 °C
VDD = 400 V
120 IDS = 15 A
VGS = -4V/+15 V
FWD = C3M0120090J
L = 142 μH
90
60
ETotal
EOn
30 EOff
0
0 5 10 15 20 25
External Gate Resistor RG(ext) (Ohms)
Figure 25. Clamped Inductive Switching Energy vs. RG(ext)
30
Conditions:
TJ = 25 °C
25
VDD = 400 V
IDS = 15 A
VGS = -4V/+15 V
FWD = C3M0120090J
20 L = 142 μH
15
10
td(off)
td(on)
tr
5 tf
0
0 5 10 15 20 25
External Gate Resistor RG(ext) (Ohms)
Figure 27. Switching Times vs. RG(ext)
100
Conditions:
IDS = 15 A
VDD = 400 V
80 RG(ext) = 2.5 Ω
VGS = -4V/+15 V
FWD = C3M0120090J
L = 142 μH
60
40
ETotal
EOn
20 EOff
0
0 25 50 75 100 125 150
Junction Temperature, TJ (°C)
Figure 26. Clamped Inductive Switching Energy vs.
Temperature
175
Figure 28. Switching Times Definition
7 C3M0120090J Rev. - , 12-2015
7페이지 | |||
구 성 | 총 10 페이지수 | ||
다운로드 | [ C3M0120090J.PDF 데이터시트 ] |
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부품번호 | 상세설명 및 기능 | 제조사 |
C3M0120090D | Silicon Carbide Power MOSFET | Cree |
C3M0120090J | Silicon Carbide Power MOSFET | Cree |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |