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PDF HMC738LP4E Data sheet ( Hoja de datos )
| Número de pieza | HMC738LP4E | |
| Descripción | GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO | |
| Fabricantes | Hittite Microwave Corporation | |
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HMC738LP4 / 738LP4E
v02.0309 MMIC VCO w/ HALF FREQUENCY OUTPUT
& DIVIDE-BY-16, 20.9 - 23.9 GHz
Typical Applications
The HMC738LP4(E) is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios / LMDS
• VSAT
Features
Pout: +9 dBm
Phase Noise: -95 dBc/Hz @ 100 kHz Typ.
No External Resonator Needed
24 Lead 4x4mm SMT Package: 16mm²
Functional Diagram
8
General Description
The HMC738LP4(E) is a GaAs InGaP Heterojunction
Bipolar Transistor (HBT) MMIC VCO. The
HMC738LP4(E) integrates a resonator, negative
resistance device, varactor diode and divide-by-16
prescaler. The VCO’s phase noise performance is
excellent over temperature, shock, and process due
to the oscillator’s monolithic structure. Power output is
+9 dBm typical from a 5V supply voltage. The voltage
controlled oscillator is packaged in a low cost leadless
QFN 4x4 mm surface mount package
8-1
Electrical Specifications, TA = +25° C, Vcc (RF), Vcc (DIG) = +5V
Frequency Range
Power Output
Parameter
SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RF Output
Tune Voltage
Supply Current
Tune Port Leakage Current (Vtune= 13V)
Output Return Loss
Harmonics/Subharmonics
Pulling (into a 2.0:1 VSWR)
Pushing @ Vtune= 5V
Frequency Drift Rate
Fo
Fo/2
RF OUT
RF OUT/2
RF OUT/16
Min.
3
-3.5
-7
Vtune
Icc (RF), Icc (DIG)
1
160
Typ.
20.9 - 23.9
-95
200
3
1/2 -23
3/2 -40
22
-90
3.5
Max.
15
+3.5
-1
13
220
10
Units
GHz
dBm
dBm
dBc/Hz
V
mA
µA
dB
dBc
dBc
MHz pp
MHz/V
MHz/°C
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
1 page  
HMC738LP4 / 738LP4E
v02.0309
MMIC VCO w/ HALF FREQUENCY OUTPUT
& DIVIDE-BY-16, 20.9 - 23.9 GHz
Pin Descriptions (Continued)
Pin Number
Function
Description
10 RFOUT/2
Half frequency output (AC coupled)
11, 15, 17
GND
Package bottom has an exposed metal paddle that
must be RF & DC grounded.
Interface Schematic
16 RFOUT
RF output (AC coupled).
8
20 Vcc (RF)
Supply Voltage
22
VTUNE
Control Voltage Input. Modulation port bandwidth
dependent on drive source impedance.
Typical Application Circuit
8-5
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HMC738LP4E.PDF ] | |
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| HMC738LP4 | GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO | Hittite Microwave Corporation |
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