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PDF KLI-8023 Data sheet ( Hoja de datos )
| Número de pieza | KLI-8023 | |
| Descripción | Linear CCD Image Sensor | |
| Fabricantes | ON Semiconductor | |
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KLI-8023
Linear CCD Image Sensor
Description
The KLI−8023 Image Sensor is a multispectral, linear solid state
image sensor for color scanning applications where ultra-high
resolution is required.
The imager consists of three parallel linear photodiode arrays, each
with 8,000 active photosites for the output of red, green, and blue
(R, G, B) signals. This device offers high sensitivity, high data rates,
low noise and negligible lag. Individual electronic exposure control
for each color allows the KLI−8023 sensor to be used under a variety
of illumination conditions. The imager can be operated in an Extended
Dynamic Range mode for the most demanding applications.
Table 1. GENERAL SPECIFICATIONS
Parameter
Typical Value
Architecture
3 Channel, RGB Trilinear CCD
Pixel Count
8002 × 3
Pixel Size
9 mm (H) × 9 mm (V)
Pixel Pitch
9 mm
Inter-Array Spacing
108 mm (12 Lines Effective)
Imager Size
Saturation Signal
72.0 mm (H) × 0.225 mm (V)
185 ke− (Normal DR Mode)
400 ke− (Extended DR Mode)
Dynamic Range
(2 MHz Data Rate)
84 dB (Normal DR Mode)
90 dB (Extended DR Mode)
Responsivity
R, G, B (−RAA)
R, G, B (−DAA)
Mono (−AAA, −SAA, −MAA)
Output Sensitivity
32, 20, 20 V/mJ/cm2
29, 19, 18 V/mJ/cm2
33 V/mJ/cm2
14.4 mV/e−
Dark Current
0.002 pA/Pixel
Dark Current Doubling Rate
8°C
Charge Transfer Efficiency
0.999998/Transfer
Photoresponse Non-Uniformity
3% Peak-Peak
Lag (First Field)
0.025%
Maximum Data Rate
6 MHz/Channel
Package
CERDIP (Sidebrazed, CuW)
Cover Glass
AR Coated, 2 Sides
NOTE: Parameters above are specified at T = 25°C (junction temperature) and
1 MHz clock rates unless otherwise noted.
www.onsemi.com
Figure 1. KLI−8023 Linear CCD
Image Sensor
Features
• 12 Line Spacing between Color Channels
• Single Shift Register per Channel
• High Off-Band Spectral Rejection
• Dark Reference Pixels Provided
• Anti-Reflective Glass
• Wide Dynamic Range, Low Noise
• Dual Dynamic Range Mode Operation
• No Image Lag
• Electronic Exposure Control
• High Charge Transfer Efficiency
• Two-Phase Register Clocking
• 74 ACT Logic Compatible Clocks
• 6 MHz Maximum Data Rate
Applications
• Digitization
• Medical Imaging
• Photography
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2015
November, 2015 − Rev. 2
1
Publication Order Number:
KLI−8023/D
1 page  
KLI−8023
Correlated double sampling (CDS) processing of the output
waveform can remove the first order magnitude of such
artifacts. In high dynamic range applications, it may be
advisable to limit the LOG fall times to minimize the current
transients in the device substrate and limit the magnitude of
the artifact to an acceptable level.
Lag
Lag, or decay lag is a measure of the amount of
photogenerated charge left behind during
a photodiode-to-CCD transfer cycle. Ideally, no charge is
left behind during such transfers and lag is equal to zero; that
is, 100% of the collected photogenerated charge is
transferred to the adjacent CCD. The use of “pinned”
photodiode technology enables the linear imagers to achieve
near perfect lag performance. Improper Transfer Gate (TG)
clocking levels can introduce a lag type response. Thus, care
must be taken to ensure that the clocking levels are not
limiting the lag performance.
Imager Responsivity
Responsivity is a measure of the imager output when
exposed to a given optical energy density. It is measured on
monochrome and color (if applicable) versions of an imager
over the entire wavelength range of operation. Imagers
having multiple photodiode arrays with differing color
filters and/or photodiode dimensions have responsivity
measured on each array. Responsivity is reported in units of:
V
mJńcm2
Linearity
The non-linearity of an image sensor is typically defined
as the percent deviation from the ideal linear response,
which is defined by the line passing through VSAT and
VDARK. The percent linearity is then 100 minus the
non-linearity. The output linearity of a solid-state image
sensor is determined from the linearity of the photon
collection process, the electron exposure structure
non-linearities (if any exists), the efficiency of charge
transportation from the photosite to the output amplifier, and
the output amplifier linearity. The absorption of photons
within the silicon substrate can be considered an ideal linear
function of incident illumination level when averaged over
a given period of time. The existence of an electronic
exposure control circuit adjacent to the photosensitive sites
can introduce a non-linearity into the overall response by
allowing small quantities of charge to remain isolated in
unwanted potential wells. Whether or not any potential wells
exist depends on the design and manufacturing of the
particular image sensor. The existence of such potential
wells in the exposure circuitry, also called exposure control
defects, will degrade the linearity only at small signal levels
and may be different from one photosite to the next.
An image sensor with excessive exposure control defects
would be rejected during quality assurance testing. The loss
of charge during the transportation of charge packets from
the photosite to the CCD, which is termed lag, tends to affect
the linearity only at very small signal levels. “Pinned”
photodiodes, or buried photodiodes, have extremely small
lag (< 0.5%), and can be considered to be lag free. The CCD
charge transfer inefficiency (CTI) will reduce the amplitude
of the charge packet as it is transported towards the output
amplifier, with the greatest effect realized at very small
signal levels. Modern CCD’s have CTE in excess of
0.999999 per CCD transfer; thus, the overall effect on
linearity is generally not a concern. If biased properly, the
output amplifier will yield a non-linearity of typically less
than 2%. Non linearity at signal levels beyond the saturation
level is expected and can often vary significantly from pixel
to pixel.
Linearity Evaluation
Ideally, the output video amplitude should vary linearly
with incident light intensity over the entire input range of
irradiance. There are many possible phenomena that can
cause non-linearity in the response curve; inadequate CTE
and improper biasing or clocking to name a few.
Electronic exposure control could be used to vary the
photodiode integration time; however, since electronic
exposure control can introduce non-linearity, it is not
recommended as a method of limiting the input signal.
The output signal versus relative irradiance is graphed and
a least squares, linear regression fit to the data is performed.
The best fit data curve should pass through zero volts and
remain linear (R2 > 0.99) up to the VSAT level.
Modulation Transfer Function (MTF)
MTF is the magnitude of the spatial frequency response of
a solid-state imager. The three main components of imager
MTF are termed the aperture MTF, diffusion MTF, and
charge transfer efficiency MTF. The aperture MTF results
from the discrete sampling nature of solid-state imagers,
with smaller pixel pitches yielding a better high frequency
MTF response. The diffusion of photogenerated charge
degrades the imager response and is responsible for the
second component. The third component is due to inefficient
charge transfer in the shift register. The maximum spatial
frequency an imager can detect without aliasing occurring
is defined as the Nyquist frequency and is equal to the
inverse of two times the pixel pitch. MTF is typically
reported at the Nyquist frequency, 1/2 Nyquist, and 1/4
Nyquist. The aperture MTF limits the maximum response at
Nyquist to 0.637. (Note that the maximum MTF response is
1.0). The diffusion component will further degrade this
value, especially at longer optical wavelengths.
www.onsemi.com
5
5 Page 
KLI−8023
Table 5. SPECIFICATIONS (continued)
Description
Symbol
Min.
Nom.
Max.
Units
Notes
Verification
Plan
KLI−8023−DAA CONFIGURATION GEN1 COLOR (Note 19)
Responsivity
Red
Green
Blue
RMAX
−
−
−
Responsivity Wavelength
Red
Green
Blue
lR
−
−
−
Photoresponse Uniformity,
Low Frequency
PRNU.
Low
−
32
20
20
650
540
460
4
V/mJ/cm2
−
−
−
nm
−
−
−
7 %p-p
Design18
Design18
Die17
Photoresponse Uniformity,
Medium Frequency
PRNU.
−
4
7 %p-p
Medium
Die17
KLI−8023−AAA, KLI−8023−SAA, AND KLI−8023−MAA CONFIGURATION MONOCHROME (Note 19)
Responsivity
Monochrome
RMAX
V/mJ/cm2
− 33 −
Responsivity Wavelength
Monochrome
lR nm
− 675 −
Photoresponse Uniformity,
Low Frequency
PRNU.
−
4
7 %p-p
Low
Design18
Design18
Die17
Photoresponse Uniformity,
Medium Frequency
PRNU.
−
4
7 %p-p
Medium
Die17
1. Defined as the maximum output level achievable before linearity or PRNU performance is degraded beyond specification.
2. With color filter. Values specified at filter peaks. 50% bandwidth = ±30 nm. Color filter arrays become transparent after 710 nm. It is
recommended that a suitable IR cut filter be used to maintain spectral balance and optimal MTF. See Figure 5.
3. As measured at 2 MHz data rate. This device utilizes 2-phase clocking for cancellation of driver displacement currents. Symmetry between
f1 and f2 phases must be maintained to minimize clock noise.
4. Dark current doubles approximately every +8°C.
5. Measured per transfer. For the total line: (0.999995) ⋅ 16044 = 0.9229.
6. Low frequency response is measured across the entire array with a 1,000 pixel-moving window and a 5 pixel median filter evaluated under
a flat field illumination.
7. Medium frequency response is measured across the entire array with a 50 pixel-moving window and a 5 pixel median filter evaluated under
a flat field illumination.
8. High frequency response non-uniformity represents individual pixel defects evaluated under a flat field illumination. An individual pixel value
may deviate above or below the average response for the entire array. Zero individual defects allowed per this specification.
9. Increasing the current load (nominally 4 mA) to improve signal bandwidth will decrease these parameters.
10. If resistive loads are used to set current, the amplifier gain will be reduced, thereby reducing the output sensitivity and net responsivity.
(e.g. with 2.2 kW loads to ground, the sensitivity drops to 12.5 mV per electron).
11. Defective pixels will be separated by at least one non-defective pixel within and across channels.
12. Pixels whose response is greater than the average response by the specified threshold, (16 mV). See Figure 4.
13. Pixels whose response is greater or less than the average response by the specified threshold, (±10%). See Figure 4.
14. Pixels whose response deviates from the average pixel response by the specified threshold, (4 mV), when operating in exposure control
mode. See Figure 4. If dark pattern correction is used with exposure control, the dark pattern acquisition should be completed with exposure
control actuated. Dark current tends to suppress the magnitude of these defects as observed in typical applications, hence line rate changes
may affect perceived defect magnitude. Note: Zero defects allowed for those pixels whose response deviates from the average pixel
response by a 20 mV threshold.
15. Defect coordinates are available upon request.
16. The quantity and type of defects acceptable for a specific application will be negotiated with each customer.
17. A parameter that is measured on every sensor during production testing.
18. A parameter that is quantified during the design verification activity.
19. Configuration KLI−8023−DAA and KLI−8023−MAA uses Gen1 color filter set and is not recommended for new designs.
www.onsemi.com
11
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