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PDF NX5P3090 Data sheet ( Hoja de datos )
| Número de pieza | NX5P3090 | |
| Descripción | USB PD and type C current-limited power switch | |
| Fabricantes | NXP Semiconductors | |
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NX5P3090
USB PD and type C current-limited power switch
Rev. 1 — 1 August 2016
Product data sheet
1. General description
The NX5P3090 is a precision adjustable current-limited power switch for USB PD
application. The device includes under voltage lockout, over-temperature protection, and
reverse current protection circuits to automatically isolate the switch terminals when a
fault condition occurs. The 29 V tolerance on VBUS pin ensures the device is able to work
on a USB PD port; a current limit input (ILIM) pin defines the over-current limit threshold;
an open-drain fault output (FAULT) indicates when a fault condition has occurred.
The over-current limit threshold can be programmed from 400 mA to 3.3 A, using an
external resistor between the ILIM pin and GND pin. In the over current condition, the
device will clamp the output current to the value set by ILIM and keep the switch on while
assert the FAULT flag. To minimize current surges during turn on, the device has built in
soft start which controls the power switch rise time.
Surge protection has been integrated in the device to enhance system robustness. The
enable input includes integrated logic level translation making the device compatible with
lower voltage processors and controllers.
NX5P3090 is offered in a 12 bump 1.35 x 1.65 mm, 0.4 mm pitch WLCSP package.
2. Features and benefits
VINT supply voltage range from 2.5 V to 5.5 V
29 V tolerance on VBUS and EN pin
Adjustable current limit from 400 mA to 3.3 A
Clamped current output in over-current condition
Very low ON resistance: 34 m (typical)
Active HIGH EN pin with internal pull down resistor
All time Reverse Current Protection
Over Temperature Protection
Surge protection: IEC61000-4-5 exceeds ±80 V on VBUS
Safety approvals
UL 62368-1, 2nd Edition, File no. 20160526-E470128
IEC 62368-1 (ed.2), File no. DK-54536-UL
ESD protection
IEC61000-4-2 contact discharge exceeds 8 kV on VBUS
HBM ANSI/ESDA/JEDEC JS-001 Class 2 exceeds 2 kV
CDM AEC standard Q100-01 (JESD22-C101E) exceeds 500 V
Specified from 40 C to +85 C ambient temperature
1 page  
NXP Semiconductors
NX5P3090
USB PD and type C current-limited power switch
8. Functional description
Table 5.
EN
X
L
H
H
H
H
Function table[1]
VINT
VBUS
<2.5V
X
2.5V to 5.5V X
2.5V to 5.5V VBUS=VINT
2.5V to 5.5V 0V to VINT
2.5V to 5.5V VBUS>VINT+40mV (>4ms)
2.5V to 5.5V Z
[1] H = HIGH voltage level; L = LOW voltage level.
FAULT
Z
Z
Z
L
L
L
Switch
under voltage lockout, switch open
disabled; switch open
enabled; switch closed
over-current, clamped current output, switch closed
reverse current; switch open
Over-temperature; switch open
8.1 EN Input
When the EN pin is set LOW, the N-channel MOSFET will be disabled, the device will
enter low-power mode disabling all protection circuits and setting the FAULT pin high
impedance. When EN is set HIGH, all protection circuits will be enabled and then, if no
fault conditions exist, the N-channel MOSFET will be turn on. There is a 100 us de-glitch
time on EN pin from LOW to HIGH.
8.2 Under-voltage lock-out
Independently of the logic level on the EN pin, the under-voltage lockout (UVLO) circuit
disables the N-channel MOSFET and enters low power mode until the input voltage
reaches the UVLO turn-on threshold level VUVLO.
8.3 ILIM
The over-current protection circuit's (OCP) trigger value Iocp can be set using an external
resistor RILIM connected between ILIM pin and GND pin. When EN is HIGH and the ILIM
pin is pulled to ground, the N-channel MOSFET will be disabled and the FAULT output set
LOW. The detailed IOCP setting is given in Section 8.4.
8.4 Over-current protection (OCP)
The device offers over current protection when enabled, three possible over-current
conditions can occur. These conditions are:
• Over-current at start-up, ISW > Iocp when enabling the N-channel MOSFET.
• Over-current after enabled, ISW > Iocp when the N-channel MOSFET is already ON.
• Short circuit after enabled, ISW > 10 A (typical).
In the over current condition, because the device clamps the output current rather than
completely shut down the switch, the power dissipation on the device might be increased
which could lead to over temperature protection (see Section 8.7).
8.4.1 Over-current at start-up
If the device senses a VBUS short to GND or over-current while enabling the N-channel
MOSFET, OCP is triggered. It limits the output current to Iocp and after the de-glitch time
sets the FAULT output LOW.
NX5P3090
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 1 August 2016
© NXP Semiconductors N.V. 2016. All rights reserved.
5 of 33
5 Page 
NXP Semiconductors
NX5P3090
USB PD and type C current-limited power switch
,RII 9,17
X$
VI(EN) = GND; VI(VBUS) = 0 V; RILIM = 16 K
(1) Tamb = -40 C
(2) Tamb = +25 C
(3) Tamb = +85 C
Fig 7. VBUS off state leakage versus temperature
DDD
9, 9,17 9
,RII 9%86
ȝ$
VI(EN) = GND; VI(VINT) = 0 V; RILIM = 16 K
(1) Tamb = -40 C
(2) Tamb = +25 C
(3) Tamb = +85 C
Fig 8. VINT off state leakage versus temperature
DDD
9, 9%86 9
NX5P3090
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 1 August 2016
© NXP Semiconductors N.V. 2016. All rights reserved.
11 of 33
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