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PDF BR25G640-3 Data sheet ( Hoja de datos )
| Número de pieza | BR25G640-3 | |
| Descripción | SPI BUS EEPROM | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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Datasheet
Serial EEPROM Series Standard EEPROM
SPI BUS EEPROM
BR25G640-3
General Description
BR25G640-3 is a 64Kbit Serial EEPROM of SPI BUS Interface.
Features
High Speed Clock Action up to 20MHz (Max)
Wait Function by HOLDB Terminal
Part or Whole of Memory Arrays Settable as
Read only Memory Area by Program
1.6V to 5.5V Single Power Source Operation Most
Suitable for Battery Use.
Up to 32 Bytes in Page Write Mode.
For SPI Bus Interface (CPOL, CPHA) = (0, 0), (1, 1)
Self-timed Programming Cycle
Low Current Consumption
At Write Action (5V)
: 0.5mA (Typ)
At Read Action (5V)
: 2.0mA (Typ)
At Standby Action (5V) : 0.1µA (Typ)
Address Auto Increment Function at Read Action
Prevention of Write Mistake
Write Prohibition at Power On
Write Prohibition by Command Code (WRDI)
Write Prohibition by WPB Pin
Write Prohibition Block Setting by Status Registers
(BP1, BP0)
Prevention of Write Mistake at Low Voltage
More than 100 years Data Retention.
More than 1 Million Write Cycles.
Bit Format 8K×8
Initial Delivery Data
Memory Array: FFh
Status Register: WPEN, BP1, BP0 : 0
Packages W(Typ) x D(Typ) x H(Max)
SOP8
MSOP8
5.00mm x 6.20mm x 1.71mm 2.90mm x 4.00mm x 0.90mm
SOP- J8
VSON008X2030
4.90mm x 6.00mm x 1.65mm 2.00mm x 3.00mm x 0.60mm
TSSOP-B8
3.00mm x 6.40mm x 1.20mm
Figure 1.
○Product structure：Silicon monolithic integrated circuit
www.rohm.com
©2014 ROHM Co., Ltd. All rights reserved.
TSZ22111･14･001
○This product is not designed protection against radioactive rays
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1 page  
BR25G640-3
Block Diagram
CSB 1
SO 2
WPB 3
GND 4
Datasheet
INSTRUCTION DECODE
CONTROL CLOCK
GENERATION
VOLTAGE
DETECTION
WRITE
INHIBITION
HIGH VOLTAGE
GENERATOR
INSTRUCTION
REGISTER
ADDRESS
REGISTER
DATA
REGISTER
STATUS REGISTER
ADDRESS
13bit
DECODER
13bit
READ/WRITE
8bit 8bit
AMP
64K
EEPROM
8 Vcc
7 HOLDB
6 SCK
5 SI
Pin Configuration
Figure 3. Block Diagram
(TOP VIEW)
Vcc HOLDB SCK
SI
Pin Descriptions
Terminal
name
Vcc
GND
CSB
SCK
SI
SO
Input
/Output
-
-
Input
Input
Input
Output
HOLDB Input
WPB
Input
CSB SO WPB GND
Figure 4. Pin Configuration
Function
Power source to be connected
All input / output reference voltage, 0V
Chip select input
Serial clock input
Ope code, address, and serial data input
Serial data output
Hold input
Command communications may be suspended
temporarily (HOLD status)
Write protect input
Write status register command is prohibited
www.rohm.com
©2014 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
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5 Page 
BR25G640-3
Typical Performance Curves‐Continued
Datasheet
120
100
80
60
SPEC
Ta=-40°C
Ta= 25°C
Ta= 85°C
SPEC
40
SPEC
20 SPEC
0
0 12 34 56
Vcc [V]
Figure 25. CSB Hold Time vs Supply Voltage
50
Ta=-40°C
Ta= 25°C
40 Ta= 85°C
SPEC
30
SPEC
20
SPEC
10
SPEC
0
0 12 3 45
Vcc [V]
Figure 26. SI Setup Time vs Supply Voltage
6
60
50 SPEC
Ta=-40°C
40 Ta= 25°C
Ta= 85°C
30
SPEC
20
SPEC
10
SPEC
0
-10
01 234 5
Vcc [V]
Figure 27. SI Hold Time vs Supply Voltage
6
140
120
100
SPEC
Ta=-40°C
Ta= 25°C
Ta= 85°C
80
SPEC
60
SPEC
40
SPEC
20
0
0 12 34 56
Vcc [V]
Figure 28. Data Output Delay Time vs Supply Voltage
www.rohm.com
©2014 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
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TSZ02201-0R2R0G100680-1-2
24.Apr.2014 Rev.001
11 Page | ||
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| PDF Descargar | [ Datasheet BR25G640-3.PDF ] | |
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