Datasheet.kr   

BR25S128GUZ-W 데이터시트 PDF




ROHM Semiconductor에서 제조한 전자 부품 BR25S128GUZ-W은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 BR25S128GUZ-W 자료 제공

부품번호 BR25S128GUZ-W 기능
기능 16K x 8bit serial EEPROM
제조업체 ROHM Semiconductor
로고 ROHM Semiconductor 로고


BR25S128GUZ-W 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 27 페이지수

미리보기를 사용할 수 없습니다

BR25S128GUZ-W 데이터시트, 핀배열, 회로
Datasheet
WL-CSP
EEPROM family
BR25S128GUZ-W
(128K)
General Description
BR25S128GUZ-W is a 16K×8bit serial EEPROM of SPI BUS interface method.
Features
„ High speed clock action up to 10MHz (Max.)
„ Wait function by HOLDB terminal
„ Part or whole of memory arrays settable as read only
memory area by program
„ 1.7V to 5.5V single power source action most suitable
for battery use
„ 64Byte page write mode useful for initial value write
at factory shipment
„ For SPI bus interface (CPOL, CPHA) = (0, 0), (1, 1)
„ Auto erase and auto end function at data rewrite
„ Low current consumption
¾ At write action (5V) : 1.5mA (Typ.)
¾ At read action (5V) : 1.0mA (Typ.)
¾ At standby action (5V) : 0.1μA (Typ.)
„ Address auto increment function at read action
„ Write mistake prevention function
¾ Write prohibition at power on
¾ Write prohibition by command code (WRDI)
¾ Write prohibition by WP pin
¾ Write prohibition block setting by status registers
(BP1, BP0)
¾ Write mistake prevention function at low voltage
„ Data kept for 40 years
„ Data rewrite up to 1,000,000 times
„ Data at shipment Memory array: FFh, status register
WPEN, BP1, BP0 : 0
Package W(Typ.) x D(Typ.) x H(Max.)
VCSP35L2
2.00mm x 2.63mm x 0.40mm
Page write
Page
Part Number
64Byte
BR25S128GUZ-W
BR25S128GUZ-W
Capacity Bit format Power source voltage
128Kbit 16K×8
1.7V to 5.5V
VCSP35L2
Product structureSilicon monolithic integrated circuit
www.rohm.com
©2012 ROHM Co., Ltd. All rights reserved.
TSZ2211114001
This product is not designed protection against radioactive rays
1/23
TSZ02201-0R2R0G100310-1-2
19.Jul.2012 Rev.001




BR25S128GUZ-W pdf, 반도체, 판매, 대치품
BR25S128GUZ-W (128K)
Block diagram
Datasheet
CSB
SCK
SI
HOLDB
WP
INSTRUCTION DECODE
CONTROL CLOCK
GENERATION
VOLTAGE
DETECTION
WRITE
INHIBITION
HIGH VOLTAGE
GENERATOR
INSTRUCTION
REGISTER
ADDRESS
REGISTER
14bit
ADDRESS
DECODER
DATA
REGISTER 8bit
R/W
AMP
14bit
131,072 bit
EEPROM
8bit
SO
Pin Configuration
BOTTOM VIEW
1 A1
B1 C1 D1
NC SI GND NC
2 A2 B2 C2 D2
SCK HOLDB SO WP
3 A3 B3 C3 D3
NC Vcc CSB NC
A BCD
Pin Descriptions
Terminal
name
CSB
SO
WP
GND
SI
SCK
HOLDB
Vcc
Input/Output
Function
Input
Output
Input
-
Input
Input
Input
-
Chip select input
Serial data output
Write protect input
Write command is prohibited
Write status register command is prohibited
All input / output reference voltage, 0V
Start bit, ope code, address, and serial data input
Serial clock input
Hold input
Command communications may be suspended temporarily (HOLD status)
Power source to be connected
www.rohm.com
©2012 ROHM Co., Ltd. All rights reserved.
TSZ2211115001
4/23
TSZ02201-0R2R0G100310-1-2
19.Jul.2012 Rev.001

4페이지










BR25S128GUZ-W 전자부품, 판매, 대치품
BR25S128GUZ-W (128K)
Typical Performance CurvesContinued
Datasheet
Figure 12. Current consumption at standby operation ISB
Figure 13. SCK frequency fSCK
Figure 14. SCK high time tSCKWH
Figure 15. SCK low time tSCKWL
www.rohm.com
©2012 ROHM Co., Ltd. All rights reserved.
TSZ2211115001
7/23
TSZ02201-0R2R0G100310-1-2
19.Jul.2012 Rev.001

7페이지


구       성 총 27 페이지수
다운로드[ BR25S128GUZ-W.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
BR25S128GUZ-W

16K x 8bit serial EEPROM

ROHM Semiconductor
ROHM Semiconductor

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵