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BU9829GUL-W PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BU9829GUL-W
기능 WLCSP EEPROM
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BU9829GUL-W 데이터시트, 핀배열, 회로
Datasheet
Serial EEPROM Series Standard EEPROM
WLCSP EEPROM
BU9829GUL-W (16Kbit)
General Description
BU9829GUL-W is Serial EEPROM built-in LDO regulator by SPI BUS interface.
Features
EEPROM PART
„ 2,048 words×8 bits architecture serial EEPROM
„ Wide operating voltage range (1.6V to 3.6V)
„ Serial Peripheral Interface
„ Self-timed write cycle with automatic erase
„ Low Power consumption
¾ Write (3.6V)
: 1.5mA (Typ.)
¾ Read (3.6V) : 0.5mA (Typ.)
¾ Standby (3.6V) : 0.1µA (Typ.)
„ Auto-increment of registers address for Read mode
„ 32 byte Page Write mode
„ DATA security
¾ Defaults to power up with write-disabled state
¾ Software instructions for write-enable/disable
¾ Block writes protection by status register
¾ Write inhibit at low Vcc
„ Initial data FFh in all address,
00h in status register and 10 in VSET [1:0].
„ Data retention: 10 years
„ Endurance : 100,000 erase/write cycles
LDO REGULATOR PART
„ Low power consumption
¾ Standby (3.6V) : 0.1 µA (Typ.)
¾ Operation (3.6V) : 0.1mA (Typ.)
„ Power on/off by enable pin
„ Initial LDO output voltage 2.9V
„ Setting output voltage by EEPROM command (VSET WRITE)
Package W(Typ.) x D(Typ.) x H(Max.)
VCSP50L1
1.74mm x 1.65mm x 0.55mm
Typical Application Circuit
Vcc2(3.3V)
Vcc1(1.8V)
RPU BU9829GUL-W
CSB
SCK
SI
LDOEN
RPD
Vcc1
SO
Vcc2
VOUT
GND
RPU
(0.1µF) (0.1µF)
CL C C
RPD
Product structure : Silicon monolithic integrated circuit
www.rohm.com
©2012 ROHM Co., Ltd. All rights reserved.
TSZ2211114001
This product is not designed protection against radioactive rays
1/23
TSZ02201-0R2R0G100400-1-2
28.AUG.2012 Rev.001




BU9829GUL-W pdf, 반도체, 판매, 대치품
BU9829GUL-W (16Kbit)
Datasheet
EEPROM AC operating characteristics (Ta=-30to 85)
Parameter
Symbol
1.6VCC11.8V
Min. Typ. Max.
SCK clock Frequency
fSCK - - 2.5
SCK High Time
tSCKWH
200
SCK Low Time
tSCKWL
200
CSB High Time
tCS 200 - -
CSB Setup Time
tCSS
150
CSB Hold Time
tCSH
150
SCK Setup Time
tSCKS
50
SCK Hold Time
tSCKH
50
SI Setup Time
tDIS 50 - -
SI Hold Time
tDIH 50 - -
Output Data Delay Time
tPD - - 100
Output Hold Time
tOH 0 - -
Output Disable Time *1 tOZ - - 200
SCK Rise Time
*1 tRC
--
1
SCK Fall Time
*1 tFC
--
1
Output Rise Time
*1 tRO - - 50
Output Fall Time
*1 tFO - - 50
Write Cycle Time
tE/W - -
5
Wait Time From Vcc1 ON To
EEPROM Command
tON
15 - -
*1 : Not 100% tested
1.8VCC13.6V
Min. Typ. Max.
--
5
80 - -
80 - -
90 - -
60 - -
60 - -
50 - -
50 - -
20 - -
20 - -
- - 80
0 --
- - 80
--
1
--
1
- - 50
- - 50
--
5
15 - -
Unit
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
ns
ns
ms
ms
Synchronous data input/output timing
VCC1
CSB
SCK
SI
tON
tSCKS
tCSS
tSCKWL
tSCKWH
tDIS tDIH
SO Hi-Z
Figure 1. Input timing
CSB
tRC tFC SCK
SI
SO
tCS
tCSH
tSCKH
tPD tOH
tRO,tFO
tOZ
Hi-Z
Figure 2. Input and output timing
SI data is latched into the chip at the rising edge of SCK clock.
Address and data must be transferred from MSB.
SO data toggles at the falling edge of SCK clock.
Output data toggles from MSB.
AC condition
Parameter
Load Capacitance
Input Rise times
Input Fall times
Input Pulse Voltage
Input and Output Timing Reference Voltages
Symbol
CL
-
-
-
-
Limits
Min. Typ. Max.
- - 100
- - 50
- - 50
0.25Vcc1/0.75Vcc1
0.3VCc1/0.7Vcc1
Unit
pF
ns
ns
V
V
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ2211115001
4/23
TSZ02201-0R2R0G100400-1-2
28.AUG.2012 Rev.001

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BU9829GUL-W 전자부품, 판매, 대치품
BU9829GUL-W (16Kbit)
Typical Performance CurvesContinued
Datasheet
Figure 9. Input leak current ILI
Figure 10. Output leak current ILO
Figure 11. Current consumption at WRITE operation ICC1
Figure 12. Consumption Current at READ operation ICC3
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ2211115001
7/23
TSZ02201-0R2R0G100400-1-2
28.AUG.2012 Rev.001

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BU9829GUL-W

WLCSP EEPROM

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