FQPF8N60 Datasheet PDF - Inchange Semiconductor
| Part Number | FQPF8N60 | |
| Description | N-Channel Mosfet Transistor | |
| Manufacturers | Inchange Semiconductor | |
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
FQPF8N60
·FEATURES
·Drain Current –ID= 7.5A@ TC=25℃
·Drain Source Voltage-
: VDSS= 600V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 1.2Ω(Max)
·Avalanche Energy Specified
·Fast Switching
·Simple Drive Requirements
·DESCRITION
·Designed for high efficiency switch mode power supply.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
600 V
VGS Gate-Source Voltage-Continuous
±30
V
ID Drain Current-Continuous
7.5 A
IDM Drain Current-Single Plused
30 A
PD Total Dissipation @TC=25℃
48 W
Tj Max. Operating Junction Temperature 150 ℃
Tstg Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
2.6 ℃/W
Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W
isc website： www.iscsemi.com
1 isc & iscsemi is registered trademark
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for FQPF8N60 electronic component. |
| Information | Total 2 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ FQPF8N60.PDF Datasheet ] | |
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| Part Number | Description | MFRS |
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