(PDF) MBR60L45CT Datasheet - Schottky Barrier Rectifier ( Diode )

Número de pieza	MBR60L45CT
Descripción	Schottky Barrier Rectifier ( Diode )
Fabricantes	Inchange Semiconductor
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No Preview Available ! Schottky Barrier Rectifier INCHANGE Semiconductor MBR60L45CT FEATURES ·Low Forward Voltage ·Guard -Ring for Stress Protection ·High Surge Capability ·175℃ Operating Junction Temperature ·Pb-Free Package is Available ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation MECHANICAL CHARACTERISTICS ·Case: Epoxy, Molded ·Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable ·Lead Temperature for Soldering Purposes: 260℃ Max. for 10 Seconds ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR IF(AV) IFSM TJ Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 45 Average Rectified Forward Current (Rated VR) TC= 125℃ 60 Nonrepetitive Peak Surge Current 8.3ms single half sine-wave superimposed on rated load conditions 200 Junction Temperature -65~175 V A A ℃ Tstg Storage Temperature Range -65~175 ℃ dv/dt Voltage Rate of Change (Rated VR) 10,000 V/μs isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark 1 page

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PDF MBR60L45CT Data sheet ( Hoja de datos )