Datasheet.kr   

AT49F512 데이터시트 PDF




ATMEL Corporation에서 제조한 전자 부품 AT49F512은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 AT49F512 자료 제공

부품번호 AT49F512 기능
기능 512K 5-volt Only Flash Memory
제조업체 ATMEL Corporation
로고 ATMEL Corporation 로고


AT49F512 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 18 페이지수

미리보기를 사용할 수 없습니다

AT49F512 데이터시트, 핀배열, 회로
Features
Single Voltage Operation
– 5V Read
– 5V Reprogramming
Fast Read Access Time – 55 ns
Internal Program Control and Timer
8K Bytes Boot Block With Lockout
Fast Erase Cycle Time – 10 Seconds
Byte-by-byte Programming – 10 µs/Byte
Hardware Data Protection
DATA Polling For End of Program Detection
Low Power Dissipation
– 30 mA Active Current
– 100 µA CMOS Standby Current
Typical 10,000 Write Cycles
Green (Pb/Halide-free) Packaging Option
1. Description
The AT49F512 is a 5-volt-only in-system programmable and erasable Flash memory.
Its 512K of memory is organized as 65,536 words by 8 bits. Manufactured with
Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to
55 ns with a power dissipation of just 165 mW over the commercial temperature
range. When the device is deselected, the CMOS standby current is less than 100 µA.
To allow for simple in-system reprogrammability, the AT49F512 does not require high
input voltages for programming. Five-volt-only commands determine the read and
programming operation of the device. Reading data out of the device is similar to
reading from an EPROM. Reprogramming the AT49F512 is performed by erasing the
entire 512K of memory and then programming on a byte-by-byte basis. The typical
byte programming time is a fast 10 µs. The end of a program cycle can be optionally
detected by the DATA polling feature. Once the end of a byte program cycle has been
detected, a new access for a read or program can begin. The typical number of pro-
gram and erase cycles is in excess of 10,000 cycles.
The optional 8K bytes boot block section includes a reprogramming write lock out fea-
ture to provide data integrity. The boot sector is designed to contain user secure code,
and when the feature is enabled, the boot sector is permanently protected from being
reprogrammed.
512K (64K x 8)
5-volt Only
Flash Memory
AT49F512
1027F–FLASH–3/05




AT49F512 pdf, 반도체, 판매, 대치품
4.4 Boot Block Programming Lockout
The device has one designated block that has a programming lockout feature. This feature pre-
vents programming of data in the designated block once the feature has been enabled. The size
of the block is 8K bytes. This block, referred to as the boot block, can contain secure code that is
used to bring up the system. Enabling the lockout feature will allow the boot code to stay in the
device while data in the rest of the device is updated. This feature does not have to be activated;
the boot block’s usage as a write protected region is optional to the user. The address range of
the boot block is 0000H to 1FFFH.
Once the feature is enabled, the data in the boot block can no longer be erased or programmed.
Data in the main memory block can still be changed through the regular programming method.
To activate the lockout feature, a series of six program commands to specific addresses with
specific data must be performed. Please refer to the Command Definitions table.
4.4.1
Boot Block Lockout Detection
A software method is available to determine if programming of the boot block section is locked
out. When the device is in the software product identification mode (see Software Product Iden-
tification Entry and Exit sections) a read from address location 00002H will show if programming
the boot block is locked out. If the data on I/O0 is low, the boot block can be programmed; if the
data on I/O0 is high, the program lockout feature has been activated and the block cannot be
programmed. The software product identification code should be used to return to standard
operation.
4.5 Product Identification
The product identification mode identifies the device and manufacturer as Atmel. It may be
accessed by hardware or software operation. The hardware operation mode can be used by an
external programmer to identify the correct programming algorithm for the Atmel product.
For details, see Operating Modes (for hardware operation) or Software Product Identification.
The manufacturer and device code is the same for both modes.
4.6 DATA Polling
The AT49F512 features DATA polling to indicate the end of a program cycle. During a program
cycle an attempted read of the last byte loaded will result in the complement of the loaded data
on I/O7. Once the program cycle has been completed, true data is valid on all outputs and the
next cycle may begin. DATA polling may begin at any time during the program cycle.
4.7 Toggle Bit
In addition to DATA polling the AT49F512 provides another method for determining the end of a
program or erase cycle. During a program or erase operation, successive attempts to read data
from the device will result in I/O6 toggling between one and zero. Once the program cycle has
completed, I/O6 will stop toggling and valid data will be read. Examining the toggle bit may begin
at any time during a program cycle.
4.8 Hardware Data Protection
Hardware features protect against inadvertent programs to the AT49F512 in the following ways:
(a) VCC sense: if VCC is below 3.8V (typical), the program function is inhibited. (b) Program
inhibit: holding any one of OE low, CE high or WE high inhibits program cycles. (c) Noise filter:
Pulses of less than 15 ns (typical) on the WE or CE inputs will not initiate a program cycle.
4 AT49F512
1027F–FLASH–3/05

4페이지










AT49F512 전자부품, 판매, 대치품
10. AC Read Characteristics
Symbol
tACC
tCE(1)
tOE(2)
tDF(3)(4)
tOH
Parameter
Address to Output Delay
CE to Output Delay
OE to Output Delay
CE or OE to Output Float
Output Hold from OE, CE or Address, whichever occurred first
11. AC Read Waveforms(1)(2)(3)(4)
AT49F512
AT49F512-55
Min Max
55
55
30
0 25
0
Units
ns
ns
ns
ns
ns
Notes:
1. CE may be delayed up to tACC - tCE after the address transition without impact on tACC.
2. OE may be delayed up to tCE - tOE, after the falling edge of CE without impact on tCE or by tACC - tOE after an address change
without impact on tACC.
3. tDF is specified from OE or CE whichever occurs first (CL = 5 pF).
4. This parameter is characterized and is not 100% tested.
1027F–FLASH–3/05
7

7페이지


구       성 총 18 페이지수
다운로드[ AT49F512.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
AT49F512

512K 5-volt Only Flash Memory

ATMEL Corporation
ATMEL Corporation

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵