(PDF) 2SC3518-Z Datasheet - Silicon NPN Power Transistor

Número de pieza	2SC3518-Z
Descripción	Silicon NPN Power Transistor
Fabricantes	Inchange Semiconductor
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No Preview Available ! isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3518-Z DESCRIPTION ·Low collector saturation voltage ·High DC current gain ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·This transistor is ideal for audio frequency amplifier and switching especially in hybrid integrated circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7V IC Collector Current-Continuous 5 A ICM Collector Current-Peak NOTE1 PC Collector Power Dissipation @Ta=25℃ NOTE2 TJ Junction Temperature 7A 2W 150 ℃ Tstg Storage Temperature Range NOTE1:PW≤300ms,Duty cycle ≤10% NOTE2:Printing boarding mounted -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark 1 page

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PDF 2SC3518-Z Data sheet ( Hoja de datos )