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2SD1816 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 2SD1816
기능 Silicon NPN Power Transistor
제조업체 Inchange Semiconductor
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2SD1816 데이터시트, 핀배열, 회로
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1816
DESCRIPTION
·Excellent linearity of hFE
·Small and slim package facilitating compactness of sets
·Low collector-to-emitter saturation voltage
·Fast switching speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Relay drivers,High speed inverters,converters and other
general high-current switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120 V
VCEO
Collector-Emitter Voltage
100 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current-Continuous 4 A
ICP Collector Current-Pulse
Collector Power Dissipation
@ TC=25
PC
Collector Power Dissipation
@ Ta=25
TJ Junction Temperature
Tstg Storage Temperature Range
8A
20 W
1.0 W
150
-55~150
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