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APM3005N PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 APM3005N
기능 N-Channel Enhancement Mode MOSFET
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APM3005N 데이터시트, 핀배열, 회로
APM3005N
N-Channel Enhancement Mode MOSFET
Features
Pin Description
30V / 80A , RDS(ON)= 4mΩ(typ.) @ VGS= 10V
RDS(ON)= 7m(typ.) @ VGS= 4.5V
Super High Dense Advanced Cell Design for
Extremely Low RDS(ON)
Reliable and Rugged
TO-220, TO-252 and TO-263 Packages
Applications
Power Management in Desktop Computer or
DC/DC Converters.
123
GDS
Top View of TO-220, TO-252 and TO-263
D
G
Ordering and Marking Information
S
N-Channel MOSFET
APM3005N
H andling C ode
Temp. Range
Package Code
Package Code
F : TO -220 U : TO -252 G : TO -263
O perating Junction T em p. R ange
C : -55 to 125 ° C
H andling C ode
TU : Tube
TR : Tape & Reel
APM 3005N :
APM 3005N
XXXXX
XXXXX - Date Code
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
VDSS
VGSS
ID*
IDM
Parameter
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current – Continuous
Maximum Drain Current – Pulsed
Rating
30
±20
80
160
Unit
V
A
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.3 - Jan., 2003
1
www.anpec.com.tw




APM3005N pdf, 반도체, 판매, 대치품
APM3005N
Typical Characteristics (Cont.)
On-Resistance vs. Gate-to-Source Voltage
0.025
IDS=60A
0.020
0.015
0.010
0.005
0.000
0 2 4 6 8 10
VGS-Gate-to-Source Voltage (V)
On-Resistaence vs. Junction Temperature
10
VIDGSS==6100AV
8
6
4
2
0
-50 -25 0 25 50 75 100 125 150
Tj-Junction Temperature (°C)
On-Resistaence vs. Junction Temperature
2.0
1.8 VIDGSS==6100AV
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50 -25 0 25 50 75 100 125 150
Tj-Junction Temperature (°C)
10
VIDDSS==8105AV
8
Gate Charge
6
4
2
0
0 10 20 30 40 50 60 70 80 90
QG-Total Gate Charge (nC)
Copyright ANPEC Electronics Corp.
Rev. A.3 - Jan., 2003
4
www.anpec.com.tw

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APM3005N 전자부품, 판매, 대치품
APM3005N
Package Information
TO-220 ( Reference JEDEC Registration TO-220)
D
Q
E
L1
be
b1 e1
A
F
H1
L
c J1
Dim
M illim ete rs
Min.
Max.
A 3.56
4.83
b1 1.14
1.78
b 0.51
1.14
c 0.31
1.14
D 14.23 16.51
e 2.29
2.79
e1 4.83
5.33
E 9.65 10.67
F 0.51
1.40
H1 5.84
6.86
J1 2.03
2.92
L 12.7 14.73
L1 3.65
6.35
R 3.53
4.09
Q 2.54
3.43
Copyright ANPEC Electronics Corp.
Rev. A.3 - Jan., 2003
7
Min.
0.140
0.045
0.020
0.012
0.560
0.090
0.190
0.380
0.020
0.230
0.080
0.500
0.143
0.139
0.100
Inches
Max.
0.190
0.070
0.045
0.045
0.650
0.110
0.210
0.420
0.055
0.270
0.115
0.580
0.250
0.161
0.135
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APM3005N

N-Channel Enhancement Mode MOSFET

Anpec Electronics Coropration
Anpec Electronics Coropration
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Anpec Electronics Coropration
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