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BR93H86-2C 데이터시트 PDF




ROHM Semiconductor에서 제조한 전자 부품 BR93H86-2C은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 BR93H86-2C 자료 제공

부품번호 BR93H86-2C 기능
기능 Operation Microwire BUS EEPROM
제조업체 ROHM Semiconductor
로고 ROHM Semiconductor 로고


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BR93H86-2C 데이터시트, 핀배열, 회로
Datasheet
Serial EEPROM Series Automotive EEPROM
125Operation Microwire BUS EEPROM (3-wire)
BR93H86-2C
General Description
BR93H86-2C is a serial EEPROM of serial 3-line interface
method.
Features
Conforming to Microwire BUS
Withstands Electrostatic Voltage up to 6kV
(HBM method typ
Wide Temperature Range -40to +125
Same package line-up and same pin configuration
2.5V to 5.5V Single Supply Voltage Operation
Address Auto Increment Function at READ
Operation
Prevention of write mistake
Write prohibition at power on
Write prohibition by command code
Write mistake prevention circuit at low voltage
Self-timed programming cycle
Program Condition Display by READY / BUSY
Low Supply Current
Write Operation (5V) : 0.8mA (Typ)
Read Operation (5V) : 0.5mA (Typ)
Standby Operation (5V) : 0.1μA (Typ)
Compact package MSOP8 / TSSOP-B8 / SOP8 /
SOP-J8
High Reliability using ROHM Original
Double-Cell Structure
More than 50 years data retention (Ta125)
More than 300,000 write cycles (Ta125)
Data set to FFFFh on all addresses at shipment
AEC-Q100 Qualified
Package
MSOP8
TSSOP-B8
SOP8
SOP-J8
MSOP8
SOP8
(Typ)
(Typ)
(Max)
2.90mm x 4.00mm x 0.90mm
3.00mm x 6.40mm x 1.20mm
5.00mm x 6.20mm x 1.71mm
4.90mm x 6.00mm x 1.65mm
TSSOP-B8
SOP-J8
BR93H86-2C
Package Type
Capacity Bit Format Product Name
16Kbit
1K×16
BR93H86-2C
Supply Voltage
2.5V to 5.5V
MSOP8 TSSOP-B8
RFVM
RFVT
●●
SOP8
RF
SOP-J8
RFJ
Product structureSilicon monolithic integrated circuit
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ2211114001
This product is not designed protection against radioactive rays
1/29
TSZ02201-0R1R0G100050-1-2
16.Feb.2016 Rev.003




BR93H86-2C pdf, 반도체, 판매, 대치품
BR93H86-2C
Datasheet
Serial Input / Output Timing
CS
tCSS
SK
tDIS
DI
DO(READ)
DO(WRITE)
tSKH
tSKL
tDIH
tCSH
tPD0
tPD1
STATUS VALID
tDF
Figure 1 Serial Input / Output Timing Diagram
Data is taken from DI, in sync with the rise of SK.
At READ command, data is outputted from DO in sync with the rise of SK.
After WRITE command input, the status signal of WRITE (READY / BUSY) can be monitored from DO by setting CS to “H”
after tCS, from the fall of CS, and will display a valid status until the next command start bit is inputted. But, if CS is set to
“L”, DO sets to High-Z state.
To execute a series of commands, CS is set to “L” once after completion of each command for internal circuit reset
Block Diagram
CS Command decode
Control
SK
Clock generation
DI Command
register
DO Dummy bit
Power source voltage detection
Write
prohibition
Address
buffer
10bit
Data
register
16bit
High voltage occurrence
Address
decoder
R/W
amplifier
10bit
16bit
16,384 bit
EEPROM
Figure 2 Block Diagram
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ2211114001
4/29
TSZ02201-0R1R0G100050-1-2
16.Feb.2016 Rev.003

4페이지










BR93H86-2C 전자부품, 판매, 대치품
BR93H86-2C
Typical Performance CurvesContinued
Datasheet
5.0
4.0 Ta= -40
Ta= 25
Ta= 125
3.0
SPEC
2.0
1.0
0.0
0
0.4 0.8 1.2
OUTPUT HIGH CURRENT : IOHmA
1.6
Figure 8 Output High Voltage vs. Output High Current
(VCC=2.5V)
5.0
4.0
3.0 Ta= -40
Ta= 25
Ta= 125
SPEC
2.0
1.0
0.0
0
0.4 0.8 1.2
OUTPUT HIGH CURRENT : IOHmA
1.6
Figure 9 Output High Voltage vs. Output High Current
(VCC=4.0V)
12
SPEC
10
8
Ta= -40
6 Ta= 25
Ta= 125
4
2
0
2 3 45 6
SUPPLY VOLTAGE : VCCV
Figure 10 Input Leak Current (CS,SK,DI)
vs. Supply Voltage
12
10
8 Ta= -40
Ta= 25
Ta= 125
6
SPEC
4
2
0
2 3 45
SUPPLY VOLTAGE : VCCV
Figure 11 Output Leak Current (DO)
vs. Supply Voltage
6
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ2211114001
7/29
TSZ02201-0R1R0G100050-1-2
16.Feb.2016 Rev.003

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부품번호상세설명 및 기능제조사
BR93H86-2C

Operation Microwire BUS EEPROM

ROHM Semiconductor
ROHM Semiconductor

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